Interferometric lithography at 46.9 nm
We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference exper...
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| Autores principales: | Capeluto, M.G., Vaschenko, G., Grisham, M.E., Marconi, M.C., Menoni, C.S., Rocca, J.J., Ludueña, S., Pietrasanta, L., Marcano O. A., Paz J.L. |
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| Formato: | CONF |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_0277786X_v5622_nPART2_p735_Capeluto |
| Aporte de: |
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