In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)

This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin f...

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Autores principales: Costa, Daniel Da Silva, Huck Iriart, Cristian, Kellermann, Guinther, Giovanetti, Lisandro José, Craievich, Aldo F., Requejo, Félix Gregorio
Formato: Articulo
Lenguaje:Inglés
Publicado: 2015
Materias:
Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/99861
https://ri.conicet.gov.ar/11336/48710
https://aip.scitation.org/doi/10.1063/1.4936377
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-99861
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
spellingShingle Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
Costa, Daniel Da Silva
Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
topic_facet Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
description This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
format Articulo
Articulo
author Costa, Daniel Da Silva
Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
author_facet Costa, Daniel Da Silva
Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
author_sort Costa, Daniel Da Silva
title In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_short In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_fullStr In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full_unstemmed In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_sort in situ study of the endotaxial growth of hexagonal cosi2 nanoplatelets in si(001)
publishDate 2015
url http://sedici.unlp.edu.ar/handle/10915/99861
https://ri.conicet.gov.ar/11336/48710
https://aip.scitation.org/doi/10.1063/1.4936377
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