Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices

In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a multilayer SiO₂‒HfO₂ (7.5 nm)‒Ag/Au nc/C60 embedded HfO₂ (6 nm)‒HfO₂ (30 nm) ga...

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Detalles Bibliográficos
Autores principales: Sengupta, Amretashis, Sarkar, Chandan Kumar, Requejo, Félix Gregorio
Formato: Articulo
Lenguaje:Inglés
Publicado: 2012
Materias:
Física
Química
Long channel MOSFET
Non-volatile memory
C60
Ag nanocrystal
Au nanocrystal
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/135520
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-135520
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Física
Química
Long channel MOSFET
Non-volatile memory
C60
Ag nanocrystal
Au nanocrystal
spellingShingle Física
Química
Long channel MOSFET
Non-volatile memory
C60
Ag nanocrystal
Au nanocrystal
Sengupta, Amretashis
Sarkar, Chandan Kumar
Requejo, Félix Gregorio
Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
topic_facet Física
Química
Long channel MOSFET
Non-volatile memory
C60
Ag nanocrystal
Au nanocrystal
description In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a multilayer SiO₂‒HfO₂ (7.5 nm)‒Ag/Au nc/C60 embedded HfO₂ (6 nm)‒HfO₂ (30 nm) gate dielectric stack. We considered three substrate materials GaN, InP and the conventional Si substrate, for use in such MOSFET NVM devices. From a semi-analytic solution of the Poisson equation, the potential and the electric fields in the substrate and the different layers of the gate oxide stack were derived. Thereafter using the WKB approximation, we have investigated the Fowler-Nordheim tunneling currents from the Si inversion layer to the embedded nanocrystal states in such devices. From our model, we simulated the write-erase characteristics, gate tunneling currents, and the transient threshold voltage shifts of the MOSFET NVM devices. The results from our model were compared with recent experimental results for Au nc and Ag nc embedded gate dielectric MOSFET memories. From the studies, the C60 embedded devices showed faster charging performance and higher charge storage, than both the metallic nc embedded devices. The nc Au embedded device displayed superior characteristics compared to the nc Ag embedded device. From the model GaN emerged as the overall better substrate material than Si and InP in terms of higher threshold voltage shift, lesser write programming voltage and better charge retention capabilities.
format Articulo
Articulo
author Sengupta, Amretashis
Sarkar, Chandan Kumar
Requejo, Félix Gregorio
author_facet Sengupta, Amretashis
Sarkar, Chandan Kumar
Requejo, Félix Gregorio
author_sort Sengupta, Amretashis
title Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
title_short Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
title_full Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
title_fullStr Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
title_full_unstemmed Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
title_sort semi-analytical modeling of ag and au nanoparticles and fullerene (c60) embedded gate oxide compound semiconductor mosfet memory devices
publishDate 2012
url http://sedici.unlp.edu.ar/handle/10915/135520
work_keys_str_mv AT senguptaamretashis semianalyticalmodelingofagandaunanoparticlesandfullerenec60embeddedgateoxidecompoundsemiconductormosfetmemorydevices
AT sarkarchandankumar semianalyticalmodelingofagandaunanoparticlesandfullerenec60embeddedgateoxidecompoundsemiconductormosfetmemorydevices
AT requejofelixgregorio semianalyticalmodelingofagandaunanoparticlesandfullerenec60embeddedgateoxidecompoundsemiconductormosfetmemorydevices
bdutipo_str Repositorios
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