Semiconductor device physics and design /
Structural properties of semiconductors - Electronic levels in semiconductors - Charge transport in materials - Junctions in semiconductors: P-N diodes - Semiconductor junctions - Bipolar junction transistors - Temporal response of diodes and bipolar transistors - Fiel effect transistors - Fiel effe...
Guardado en:
Autor principal: | |
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Otros Autores: | |
Formato: | Libro |
Lenguaje: | Inglés |
Publicado: |
Dordrecht :
Springer,
2008.
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Materias: | |
Aporte de: | Registro referencial: Solicitar el recurso aquí |
LEADER | 01071Cam#a22002295a#4500 | ||
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100 | 1 | |a Mishra, Umesh K. |9 303844 | |
245 | 1 | 0 | |a Semiconductor device physics and design / |c Umesh K. Mishra, Jasprit Singh. |
260 | |a Dordrecht : |b Springer, |c 2008. | ||
300 | |a xxiii, 559 p. : |b figuras | ||
520 | 2 | |a Structural properties of semiconductors - Electronic levels in semiconductors - Charge transport in materials - Junctions in semiconductors: P-N diodes - Semiconductor junctions - Bipolar junction transistors - Temporal response of diodes and bipolar transistors - Fiel effect transistors - Fiel effect transistors: MOSFET - Coherent transport and mesoscopic devices - Appendices. | |
650 | 4 | |a SEMICONDUCTORES |9 265167 | |
700 | 1 | |a Singh, Jasprit. |9 279569 | |
929 | |a 40598, 40617, 41100 COM Tesoro Nacional 2013 | ||
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