Compound semiconductor bulk materials and characterizations /
Physical properties - Crystal growth methods - Principles of crystal growth - Defects - Characterization - Applications - GaP - GaAs - GaSb - InP - InAs - InSb - CdS - CdSe - CdTe - ZnS - ZnSe - ZnTe.
Guardado en:
Autor principal: | |
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Formato: | Libro |
Lenguaje: | Inglés |
Publicado: |
New Jersey :
World Scientific,
c2007.
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Materias: | |
Aporte de: | Registro referencial: Solicitar el recurso aquí |
LEADER | 01254Cam#a22003133a#4500 | ||
---|---|---|---|
001 | INGC-MON-017024 | ||
003 | ARLp-UFI | ||
005 | 20221019005323.0 | ||
008 | 071219s2007 njua b 001 0 eng c | ||
010 | |a 2007300280 | ||
020 | |a 9810217285 | ||
020 | |a 9789810217280 | ||
035 | |a (OCoLC)ocm71681096 | ||
040 | |a AR-LpUFI |c AR-LpUFI |d BAKER |d BTCTA |d YDXCP |d ZCU |d DLC |d ARLp-UFI | ||
042 | |a pcc | ||
050 | 0 | 0 | |a TK7871.99.C65 |b O33 2007 |
080 | |a 621.382 | ||
100 | 1 | |a Oda, Osamu. |9 300940 | |
245 | 1 | 0 | |a Compound semiconductor bulk materials and characterizations / |c Osamu Oda. |
260 | |a New Jersey : |b World Scientific, |c c2007. | ||
300 | |a xv, 538 p. : |b il ; |c 26 cm. | ||
520 | 2 | |a Physical properties - Crystal growth methods - Principles of crystal growth - Defects - Characterization - Applications - GaP - GaAs - GaSb - InP - InAs - InSb - CdS - CdSe - CdTe - ZnS - ZnSe - ZnTe. | |
650 | 4 | |a SEMICONDUCTORES |9 265167 | |
906 | |a 7 |b cbc |c pccadap |d 2 |e ncip |f 20 |g y-gencatlg | ||
925 | 0 | |a acquire |b 2 shelf copies |x policy default | |
929 | |a 37178 COM Tesoro Nacional 2009 | ||
942 | |c LIB |6 _ | ||
955 | |a ps09 2007-12-19 z-processor to ASCD |i jx12 2008-01-09 |e jx12 2008-01-09 to Dewey |a aa07 2008-05-21 | ||
999 | |a GEB |c 17022 |d 17022 |