Graphene epitaxial growth on SiC(0001) for resistance standards

por Real, Mariano, Lass, Eric A., Liu, Fan-Hung, Shen, Tian, Jones, George R., Soons, Johannes A., Newell, David B., Davydov, Albert V., Elmquist, Randolph E., INTI-Física y Metrología. Buenos Aires, AR, Institute of Electrical and Electronics Engineers. IEEE. New York, US
Publicado 2013