Charge trapping/detrapping in HfO2-based MOS devices

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The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to...

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Autores principales: Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F., Faigón, A.
Formato: CONF
Materias:
High-K gate dielectrics
hysteresis
MOS devices
Capacitance-voltage curve
Charge trapping/detrapping
High-k gate dielectrics
Insulating layers
Normal operating conditions
Physical parameters
Capacitance
Gate dielectrics
Hafnium oxides
Hysteresis
Nanoelectronics
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_97898716_v_n_p113_Salomone
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spelling todo:paper_97898716_v_n_p113_Salomone2023-10-03T16:45:29Z Charge trapping/detrapping in HfO2-based MOS devices Salomone, L.S. Carbonetto, S.H. Inza, M.A.G. Lipovetzky, J. Redín, E.G. Campabadal, F. Faigón, A. High-K gate dielectrics hysteresis MOS devices Capacitance-voltage curve Charge trapping/detrapping High-k gate dielectrics Insulating layers Normal operating conditions Physical parameters Capacitance Gate dielectrics Hafnium oxides Hysteresis Nanoelectronics MOS devices The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic High-K gate dielectrics
hysteresis
MOS devices
Capacitance-voltage curve
Charge trapping/detrapping
High-k gate dielectrics
Insulating layers
Normal operating conditions
Physical parameters
Capacitance
Gate dielectrics
Hafnium oxides
Hysteresis
Nanoelectronics
MOS devices
spellingShingle High-K gate dielectrics
hysteresis
MOS devices
Capacitance-voltage curve
Charge trapping/detrapping
High-k gate dielectrics
Insulating layers
Normal operating conditions
Physical parameters
Capacitance
Gate dielectrics
Hafnium oxides
Hysteresis
Nanoelectronics
MOS devices
Salomone, L.S.
Carbonetto, S.H.
Inza, M.A.G.
Lipovetzky, J.
Redín, E.G.
Campabadal, F.
Faigón, A.
Charge trapping/detrapping in HfO2-based MOS devices
topic_facet High-K gate dielectrics
hysteresis
MOS devices
Capacitance-voltage curve
Charge trapping/detrapping
High-k gate dielectrics
Insulating layers
Normal operating conditions
Physical parameters
Capacitance
Gate dielectrics
Hafnium oxides
Hysteresis
Nanoelectronics
MOS devices
description The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS.
format CONF
author Salomone, L.S.
Carbonetto, S.H.
Inza, M.A.G.
Lipovetzky, J.
Redín, E.G.
Campabadal, F.
Faigón, A.
author_facet Salomone, L.S.
Carbonetto, S.H.
Inza, M.A.G.
Lipovetzky, J.
Redín, E.G.
Campabadal, F.
Faigón, A.
author_sort Salomone, L.S.
title Charge trapping/detrapping in HfO2-based MOS devices
title_short Charge trapping/detrapping in HfO2-based MOS devices
title_full Charge trapping/detrapping in HfO2-based MOS devices
title_fullStr Charge trapping/detrapping in HfO2-based MOS devices
title_full_unstemmed Charge trapping/detrapping in HfO2-based MOS devices
title_sort charge trapping/detrapping in hfo2-based mos devices
url http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone
work_keys_str_mv AT salomonels chargetrappingdetrappinginhfo2basedmosdevices
AT carbonettosh chargetrappingdetrappinginhfo2basedmosdevices
AT inzamag chargetrappingdetrappinginhfo2basedmosdevices
AT lipovetzkyj chargetrappingdetrappinginhfo2basedmosdevices
AT redineg chargetrappingdetrappinginhfo2basedmosdevices
AT campabadalf chargetrappingdetrappinginhfo2basedmosdevices
AT faigona chargetrappingdetrappinginhfo2basedmosdevices
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