Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation

MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE.

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Detalles Bibliográficos
Autores principales: Quinteros, C., Sambuco Salomone, L., Redín, E., Rafí, J.M., Zabala, M., Faigón, A., Palumbo, F., Campabadal, F.
Formato: CONF
Materias:
High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
Radiation effects
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_97814577_v_n_p67_Quinteros2023-10-03T16:43:24Z Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation Quinteros, C. Sambuco Salomone, L. Redín, E. Rafí, J.M. Zabala, M. Faigón, A. Palumbo, F. Campabadal, F. High-K gate dielectrics MOS devices Radiation Effects C-V curve Capacitive structure Comparative analysis High-k dielectric High-k gate dielectrics Dielectric materials MOS devices Radiation effects MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
spellingShingle High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
Quinteros, C.
Sambuco Salomone, L.
Redín, E.
Rafí, J.M.
Zabala, M.
Faigón, A.
Palumbo, F.
Campabadal, F.
Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
topic_facet High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
description MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE.
format CONF
author Quinteros, C.
Sambuco Salomone, L.
Redín, E.
Rafí, J.M.
Zabala, M.
Faigón, A.
Palumbo, F.
Campabadal, F.
author_facet Quinteros, C.
Sambuco Salomone, L.
Redín, E.
Rafí, J.M.
Zabala, M.
Faigón, A.
Palumbo, F.
Campabadal, F.
author_sort Quinteros, C.
title Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_short Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_full Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_fullStr Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_full_unstemmed Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_sort comparative analysis of mis capacitive structures with high-k dielectrics under gamma, 16o and p radiation
url http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
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AT sambucosalomonel comparativeanalysisofmiscapacitivestructureswithhighkdielectricsundergamma16oandpradiation
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