Transport in quantum spin Hall edges in contact to a quantum dot
We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ. We solve the problem with nonequilibrium Green functions. We focus on the linear-response regime and...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_24699950_v94_n12_p_Rizzo |
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todo:paper_24699950_v94_n12_p_Rizzo2023-10-03T16:41:43Z Transport in quantum spin Hall edges in contact to a quantum dot Rizzo, B. Camjayi, A. Arrachea, L. We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ. We solve the problem with nonequilibrium Green functions. We focus on the linear-response regime and treat the many-body interactions with quantum Monte Carlo. The effects of U and λ are competitive and the induced transport takes place through different channels. The two mechanisms can be switched by changing the occupation of the dot with a gate voltage. © 2016 American Physical Society. Fil:Camjayi, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_24699950_v94_n12_p_Rizzo |
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Universidad de Buenos Aires |
| institution_str |
I-28 |
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R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| description |
We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ. We solve the problem with nonequilibrium Green functions. We focus on the linear-response regime and treat the many-body interactions with quantum Monte Carlo. The effects of U and λ are competitive and the induced transport takes place through different channels. The two mechanisms can be switched by changing the occupation of the dot with a gate voltage. © 2016 American Physical Society. |
| format |
JOUR |
| author |
Rizzo, B. Camjayi, A. Arrachea, L. |
| spellingShingle |
Rizzo, B. Camjayi, A. Arrachea, L. Transport in quantum spin Hall edges in contact to a quantum dot |
| author_facet |
Rizzo, B. Camjayi, A. Arrachea, L. |
| author_sort |
Rizzo, B. |
| title |
Transport in quantum spin Hall edges in contact to a quantum dot |
| title_short |
Transport in quantum spin Hall edges in contact to a quantum dot |
| title_full |
Transport in quantum spin Hall edges in contact to a quantum dot |
| title_fullStr |
Transport in quantum spin Hall edges in contact to a quantum dot |
| title_full_unstemmed |
Transport in quantum spin Hall edges in contact to a quantum dot |
| title_sort |
transport in quantum spin hall edges in contact to a quantum dot |
| url |
http://hdl.handle.net/20.500.12110/paper_24699950_v94_n12_p_Rizzo |
| work_keys_str_mv |
AT rizzob transportinquantumspinhalledgesincontacttoaquantumdot AT camjayia transportinquantumspinhalledgesincontacttoaquantumdot AT arracheal transportinquantumspinhalledgesincontacttoaquantumdot |
| _version_ |
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