Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots

In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) a...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Alcalde, A.M., Sanz, L., Romano, C., Marques, G.E.
Formato: JOUR
Materias:
Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) and piezoelectric (PE) coupling to the spin relaxation. We reveal the importance of an appropriate description of the electron Landé g-factor in the calculation of the rates. Our results demonstrate that, for narrow-gap materials, the DP interaction becomes the dominant one. This behavior is not observed in wide or intermediate gap semiconductors, where the PE coupling, in general, governs the relaxation processes. © 2009 Springer Science+Business Media, LLC.

Ejemplares similares