Prediction of structures and related properties of silicon clusters

Silicon is one of the most important semi conducting materials employed in microelectronic technologies. This chapter is dedicated to review the enormous effort made during the last years to develop confident methods to determinate the geometries and related properties of silicon clusters. Searching...

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Autor principal: Ferraro, M.B.
Formato: JOUR
Materias:
Global optimization
Microelectronics
Molecular dynamics
Silicon
Structures (built objects)
Conducting materials
Generic structural motif
Global optimization method
Hybrid methodologies
Local optimizations
Microelectronic technologies
Silicon clusters
State of the art
Structural optimization
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_14727978_v7_n3-4_p195_Ferraro
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_14727978_v7_n3-4_p195_Ferraro
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spelling todo:paper_14727978_v7_n3-4_p195_Ferraro2023-10-03T16:18:08Z Prediction of structures and related properties of silicon clusters Ferraro, M.B. Global optimization Microelectronics Molecular dynamics Silicon Structures (built objects) Conducting materials Generic structural motif Global optimization method Hybrid methodologies Local optimizations Microelectronic technologies Silicon clusters State of the art Structural optimization Silicon is one of the most important semi conducting materials employed in microelectronic technologies. This chapter is dedicated to review the enormous effort made during the last years to develop confident methods to determinate the geometries and related properties of silicon clusters. Searching employing full global optimization of the energy surface, using techniques like Molecular Dynamics (MD), algorithms, and local optimization of structures built onto generic structural motifs are reported. Hybrid methodologies combining tight-binding (TB) with global optimization methods also contribute to the state of the art in the prediction of the structures, and calculation of properties of silicon clusters, based on all-electron DFT methods are also included. © 2007 IOS Press and the authors. Fil:Ferraro, M.B. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_14727978_v7_n3-4_p195_Ferraro
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Global optimization
Microelectronics
Molecular dynamics
Silicon
Structures (built objects)
Conducting materials
Generic structural motif
Global optimization method
Hybrid methodologies
Local optimizations
Microelectronic technologies
Silicon clusters
State of the art
Structural optimization
spellingShingle Global optimization
Microelectronics
Molecular dynamics
Silicon
Structures (built objects)
Conducting materials
Generic structural motif
Global optimization method
Hybrid methodologies
Local optimizations
Microelectronic technologies
Silicon clusters
State of the art
Structural optimization
Ferraro, M.B.
Prediction of structures and related properties of silicon clusters
topic_facet Global optimization
Microelectronics
Molecular dynamics
Silicon
Structures (built objects)
Conducting materials
Generic structural motif
Global optimization method
Hybrid methodologies
Local optimizations
Microelectronic technologies
Silicon clusters
State of the art
Structural optimization
description Silicon is one of the most important semi conducting materials employed in microelectronic technologies. This chapter is dedicated to review the enormous effort made during the last years to develop confident methods to determinate the geometries and related properties of silicon clusters. Searching employing full global optimization of the energy surface, using techniques like Molecular Dynamics (MD), algorithms, and local optimization of structures built onto generic structural motifs are reported. Hybrid methodologies combining tight-binding (TB) with global optimization methods also contribute to the state of the art in the prediction of the structures, and calculation of properties of silicon clusters, based on all-electron DFT methods are also included. © 2007 IOS Press and the authors.
format JOUR
author Ferraro, M.B.
author_facet Ferraro, M.B.
author_sort Ferraro, M.B.
title Prediction of structures and related properties of silicon clusters
title_short Prediction of structures and related properties of silicon clusters
title_full Prediction of structures and related properties of silicon clusters
title_fullStr Prediction of structures and related properties of silicon clusters
title_full_unstemmed Prediction of structures and related properties of silicon clusters
title_sort prediction of structures and related properties of silicon clusters
url http://hdl.handle.net/20.500.12110/paper_14727978_v7_n3-4_p195_Ferraro
work_keys_str_mv AT ferraromb predictionofstructuresandrelatedpropertiesofsiliconclusters
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