A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches

The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the pr...

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Detalles Bibliográficos
Autores principales: Archubi, C.D., Arista, N.R.
Formato: JOUR
Materias:
Germanium
Alternative calculations
Approximate descriptions
Current limitation
Dielectric models
Nonlinear approach
Theoretical methods
Threshold effect
Transport cross-section
Energy dissipation
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_14346028_v89_n3_p_Archubi2023-10-03T16:14:35Z A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches Archubi, C.D. Arista, N.R. Germanium Alternative calculations Approximate descriptions Current limitation Dielectric models Nonlinear approach Theoretical methods Threshold effect Transport cross-section Energy dissipation The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the properties of individual and collective contributions according to each model. In addition, we perform an alternative calculation using a non-linear approach based on transport-cross-section methods. These different approaches are compared with experimental results for two semiconductors (Si and Ge) and two insulators (LiF and AlF3), obtaining an approximate description of threshold effects at very low energies. Some interesting similarities and discrepancies are found, which show the current limitations of the theoretical descriptions provided by these methods. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2016. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Germanium
Alternative calculations
Approximate descriptions
Current limitation
Dielectric models
Nonlinear approach
Theoretical methods
Threshold effect
Transport cross-section
Energy dissipation
spellingShingle Germanium
Alternative calculations
Approximate descriptions
Current limitation
Dielectric models
Nonlinear approach
Theoretical methods
Threshold effect
Transport cross-section
Energy dissipation
Archubi, C.D.
Arista, N.R.
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
topic_facet Germanium
Alternative calculations
Approximate descriptions
Current limitation
Dielectric models
Nonlinear approach
Theoretical methods
Threshold effect
Transport cross-section
Energy dissipation
description The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the properties of individual and collective contributions according to each model. In addition, we perform an alternative calculation using a non-linear approach based on transport-cross-section methods. These different approaches are compared with experimental results for two semiconductors (Si and Ge) and two insulators (LiF and AlF3), obtaining an approximate description of threshold effects at very low energies. Some interesting similarities and discrepancies are found, which show the current limitations of the theoretical descriptions provided by these methods. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2016.
format JOUR
author Archubi, C.D.
Arista, N.R.
author_facet Archubi, C.D.
Arista, N.R.
author_sort Archubi, C.D.
title A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
title_short A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
title_full A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
title_fullStr A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
title_full_unstemmed A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
title_sort study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
url http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi
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AT archubicd studyofthresholdeffectsintheenergylossofslowprotonsinsemiconductorsandinsulatorsusingdielectricandnonlinearapproaches
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