Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
We have studied long time relaxation effects on the nonvolatile resistance state produced by resistive switching in devices composed by ceramic YBa 2Cu 3O 7-δ and La 0.7Sr 0.3MnO 3/metal (Au, Pt, Ag) interfaces. The time relaxation can be described by a stretched exponential law that is characterize...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | JOUR |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_10980121_v86_n10_p_Schulman |
| Aporte de: |
| id |
todo:paper_10980121_v86_n10_p_Schulman |
|---|---|
| record_format |
dspace |
| spelling |
todo:paper_10980121_v86_n10_p_Schulman2023-10-03T16:06:21Z Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories Schulman, A. Rozenberg, M.J. Acha, C. We have studied long time relaxation effects on the nonvolatile resistance state produced by resistive switching in devices composed by ceramic YBa 2Cu 3O 7-δ and La 0.7Sr 0.3MnO 3/metal (Au, Pt, Ag) interfaces. The time relaxation can be described by a stretched exponential law that is characterized by a power exponent (n) close to 1/2. We found that the characteristic time (τ) increases with increasing temperature and applied power. The origin of the relaxation effect can be related to oxygen diffusion processes, which were recently associated with the mechanism of bipolar switching in complex oxide interfaces. We argue that the anomalous behavior can be understood in terms of diffusion of oxygen ions (or oxygen vacancies) on a two-dimensional surface with a temperature-dependent density of trapping centers, which may correspond, physically, to the diffusion along grain boundaries. © 2012 American Physical Society. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v86_n10_p_Schulman |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| description |
We have studied long time relaxation effects on the nonvolatile resistance state produced by resistive switching in devices composed by ceramic YBa 2Cu 3O 7-δ and La 0.7Sr 0.3MnO 3/metal (Au, Pt, Ag) interfaces. The time relaxation can be described by a stretched exponential law that is characterized by a power exponent (n) close to 1/2. We found that the characteristic time (τ) increases with increasing temperature and applied power. The origin of the relaxation effect can be related to oxygen diffusion processes, which were recently associated with the mechanism of bipolar switching in complex oxide interfaces. We argue that the anomalous behavior can be understood in terms of diffusion of oxygen ions (or oxygen vacancies) on a two-dimensional surface with a temperature-dependent density of trapping centers, which may correspond, physically, to the diffusion along grain boundaries. © 2012 American Physical Society. |
| format |
JOUR |
| author |
Schulman, A. Rozenberg, M.J. Acha, C. |
| spellingShingle |
Schulman, A. Rozenberg, M.J. Acha, C. Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| author_facet |
Schulman, A. Rozenberg, M.J. Acha, C. |
| author_sort |
Schulman, A. |
| title |
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| title_short |
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| title_full |
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| title_fullStr |
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| title_full_unstemmed |
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| title_sort |
anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories |
| url |
http://hdl.handle.net/20.500.12110/paper_10980121_v86_n10_p_Schulman |
| work_keys_str_mv |
AT schulmana anomaloustimerelaxationofthenonvolatileresistivestateinbipolarresistiveswitchingoxidebasedmemories AT rozenbergmj anomaloustimerelaxationofthenonvolatileresistivestateinbipolarresistiveswitchingoxidebasedmemories AT achac anomaloustimerelaxationofthenonvolatileresistivestateinbipolarresistiveswitchingoxidebasedmemories |
| _version_ |
1782030483598606336 |