Voltage profile and four-terminal resistance of an interacting quantum wire
We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case,...
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todo:paper_10980121_v77_n23_p_Arrachea2023-10-03T16:06:07Z Voltage profile and four-terminal resistance of an interacting quantum wire Arrachea, L. Naón, C. Salvay, M. We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case, interactions leave a signature in a power-law behavior of R4pt as a function of the voltage V and the temperature T. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of R4pt is explained in simple terms. © 2008 The American Physical Society. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v77_n23_p_Arrachea |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| description |
We investigate the behavior of the four-terminal resistance R4pt in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case, interactions leave a signature in a power-law behavior of R4pt as a function of the voltage V and the temperature T. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of R4pt is explained in simple terms. © 2008 The American Physical Society. |
| format |
JOUR |
| author |
Arrachea, L. Naón, C. Salvay, M. |
| spellingShingle |
Arrachea, L. Naón, C. Salvay, M. Voltage profile and four-terminal resistance of an interacting quantum wire |
| author_facet |
Arrachea, L. Naón, C. Salvay, M. |
| author_sort |
Arrachea, L. |
| title |
Voltage profile and four-terminal resistance of an interacting quantum wire |
| title_short |
Voltage profile and four-terminal resistance of an interacting quantum wire |
| title_full |
Voltage profile and four-terminal resistance of an interacting quantum wire |
| title_fullStr |
Voltage profile and four-terminal resistance of an interacting quantum wire |
| title_full_unstemmed |
Voltage profile and four-terminal resistance of an interacting quantum wire |
| title_sort |
voltage profile and four-terminal resistance of an interacting quantum wire |
| url |
http://hdl.handle.net/20.500.12110/paper_10980121_v77_n23_p_Arrachea |
| work_keys_str_mv |
AT arracheal voltageprofileandfourterminalresistanceofaninteractingquantumwire AT naonc voltageprofileandfourterminalresistanceofaninteractingquantumwire AT salvaym voltageprofileandfourterminalresistanceofaninteractingquantumwire |
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