Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular,...

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Autores principales: Camjayi, A., Chitra, R., Rozenberg, M.J.
Formato: JOUR
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
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spelling todo:paper_10980121_v73_n4_p_Camjayi2023-10-03T16:05:59Z Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory Camjayi, A. Chitra, R. Rozenberg, M.J. We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a "bad metal" state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line. © 2006 The American Physical Society. Fil:Camjayi, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We study the electronic state of the doped Mott-Hubbard insulator within the dynamical mean field theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a "bad metal" state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line. © 2006 The American Physical Society.
format JOUR
author Camjayi, A.
Chitra, R.
Rozenberg, M.J.
spellingShingle Camjayi, A.
Chitra, R.
Rozenberg, M.J.
Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
author_facet Camjayi, A.
Chitra, R.
Rozenberg, M.J.
author_sort Camjayi, A.
title Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_short Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_full Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_fullStr Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_full_unstemmed Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory
title_sort electronic state of a doped mott-hubbard insulator at finite temperatures studied using the dynamical mean-field theory
url http://hdl.handle.net/20.500.12110/paper_10980121_v73_n4_p_Camjayi
work_keys_str_mv AT camjayia electronicstateofadopedmotthubbardinsulatoratfinitetemperaturesstudiedusingthedynamicalmeanfieldtheory
AT chitrar electronicstateofadopedmotthubbardinsulatoratfinitetemperaturesstudiedusingthedynamicalmeanfieldtheory
AT rozenbergmj electronicstateofadopedmotthubbardinsulatoratfinitetemperaturesstudiedusingthedynamicalmeanfieldtheory
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