Radiation defects studies on Ar-lmplanted Hg1-xCdxTe

Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiat...

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Autores principales:	Aguirre, M.H., Cánepa, H.R., De Walsöe Reca, N.E.
Formato:	JOUR
Materias:	Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_10120386_v152_n_p33_Aguirre
record_format	dspace
spelling	todo:paper_10120386_v152_n_p33_Aguirre2023-10-03T15:56:16Z Radiation defects studies on Ar-lmplanted Hg1-xCdxTe Aguirre, M.H. Cánepa, H.R. De Walsöe Reca, N.E. Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling
spellingShingle	Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling Aguirre, M.H. Cánepa, H.R. De Walsöe Reca, N.E. Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
topic_facet	Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling
description	Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp.
format	JOUR
author	Aguirre, M.H. Cánepa, H.R. De Walsöe Reca, N.E.
author_facet	Aguirre, M.H. Cánepa, H.R. De Walsöe Reca, N.E.
author_sort	Aguirre, M.H.
title	Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_short	Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_full	Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_fullStr	Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_full_unstemmed	Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_sort	radiation defects studies on ar-lmplanted hg1-xcdxte
url	http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
work_keys_str_mv	AT aguirremh radiationdefectsstudiesonarlmplantedhg1xcdxte AT canepahr radiationdefectsstudiesonarlmplantedhg1xcdxte AT dewalsoerecane radiationdefectsstudiesonarlmplantedhg1xcdxte
_version_	1782025837440139264

Radiation defects studies on Ar-lmplanted Hg1-xCdxTe

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