Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates
We present a systematic study of the structural, magnetic, electrical and magnetoresistive properties of La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films epitaxially grown on LaAlO<inf>3</inf> single crystalline substrates using metal organic...
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todo:paper_09258388_v655_n_p327_ElHelali2023-10-03T15:46:29Z Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates El Helali, S. Daoudi, K. Boudard, M. Schulman, A. Acha, C. Roussel, H. Oumezzine, M. Oueslati, M. Colossal magnetoresistance LCMO Strain Transport properties Calcium Colossal magnetoresistance Deposition Electron transport properties Epitaxial growth Film thickness Lanthanum alloys Manganese oxide Organometallics Silver Strain Temperature Temperature distribution Thick films X ray diffraction Applied magnetic fields LCMO Magnetoresistive property Metal organic deposition process Resistance measurement Single crystalline substrates Temperature dependence X-ray diffraction measurements Thin films We present a systematic study of the structural, magnetic, electrical and magnetoresistive properties of La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films epitaxially grown on LaAlO<inf>3</inf> single crystalline substrates using metal organic deposition process. The evolutions of the lattice parameters and the corresponding strain as a function of the film thickness (20-80 nm) have been investigated using X-ray diffraction measurements. The films were found to be totally relaxed for a thickness around 60 nm. Magnetization and resistance measurements as a function of temperature revealed a direct correlation of the transition temperature from a ferromagnetic state to the paramagnetic state with the film thickness. The temperature dependence of the resistivity (ρ (T)) has been fitted using various theoretical approaches. Below the transition temperature (T<inf>P</inf>) the ρ (T) graphs were well fitted using the ρ(T) = ρ<inf>0</inf> + ATα formula, in which the fitting parameters ρ<inf>0</inf> and α have been used to clarify the conduction mechanism. Above T<inf>P</inf>, the ρ (T) graphs were found to be well fitted using different models including the VRH model and the small polaron model. A magnetoresistance of 91% was measured at 248 K for the for 60 nm thick film under an applied magnetic field of 7 T. As well as a non-volatile resistive switching capacity of 15% on Ag contacts deposited on top of this film. © 2015 Elsevier B.V. Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_09258388_v655_n_p327_ElHelali |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Colossal magnetoresistance LCMO Strain Transport properties Calcium Colossal magnetoresistance Deposition Electron transport properties Epitaxial growth Film thickness Lanthanum alloys Manganese oxide Organometallics Silver Strain Temperature Temperature distribution Thick films X ray diffraction Applied magnetic fields LCMO Magnetoresistive property Metal organic deposition process Resistance measurement Single crystalline substrates Temperature dependence X-ray diffraction measurements Thin films |
| spellingShingle |
Colossal magnetoresistance LCMO Strain Transport properties Calcium Colossal magnetoresistance Deposition Electron transport properties Epitaxial growth Film thickness Lanthanum alloys Manganese oxide Organometallics Silver Strain Temperature Temperature distribution Thick films X ray diffraction Applied magnetic fields LCMO Magnetoresistive property Metal organic deposition process Resistance measurement Single crystalline substrates Temperature dependence X-ray diffraction measurements Thin films El Helali, S. Daoudi, K. Boudard, M. Schulman, A. Acha, C. Roussel, H. Oumezzine, M. Oueslati, M. Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| topic_facet |
Colossal magnetoresistance LCMO Strain Transport properties Calcium Colossal magnetoresistance Deposition Electron transport properties Epitaxial growth Film thickness Lanthanum alloys Manganese oxide Organometallics Silver Strain Temperature Temperature distribution Thick films X ray diffraction Applied magnetic fields LCMO Magnetoresistive property Metal organic deposition process Resistance measurement Single crystalline substrates Temperature dependence X-ray diffraction measurements Thin films |
| description |
We present a systematic study of the structural, magnetic, electrical and magnetoresistive properties of La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films epitaxially grown on LaAlO<inf>3</inf> single crystalline substrates using metal organic deposition process. The evolutions of the lattice parameters and the corresponding strain as a function of the film thickness (20-80 nm) have been investigated using X-ray diffraction measurements. The films were found to be totally relaxed for a thickness around 60 nm. Magnetization and resistance measurements as a function of temperature revealed a direct correlation of the transition temperature from a ferromagnetic state to the paramagnetic state with the film thickness. The temperature dependence of the resistivity (ρ (T)) has been fitted using various theoretical approaches. Below the transition temperature (T<inf>P</inf>) the ρ (T) graphs were well fitted using the ρ(T) = ρ<inf>0</inf> + ATα formula, in which the fitting parameters ρ<inf>0</inf> and α have been used to clarify the conduction mechanism. Above T<inf>P</inf>, the ρ (T) graphs were found to be well fitted using different models including the VRH model and the small polaron model. A magnetoresistance of 91% was measured at 248 K for the for 60 nm thick film under an applied magnetic field of 7 T. As well as a non-volatile resistive switching capacity of 15% on Ag contacts deposited on top of this film. © 2015 Elsevier B.V. |
| format |
JOUR |
| author |
El Helali, S. Daoudi, K. Boudard, M. Schulman, A. Acha, C. Roussel, H. Oumezzine, M. Oueslati, M. |
| author_facet |
El Helali, S. Daoudi, K. Boudard, M. Schulman, A. Acha, C. Roussel, H. Oumezzine, M. Oueslati, M. |
| author_sort |
El Helali, S. |
| title |
Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| title_short |
Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| title_full |
Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| title_fullStr |
Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| title_full_unstemmed |
Strain dependence of the physical properties of epitaxial La<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> thin films grown on LaAlO<inf>3</inf> substrates |
| title_sort |
strain dependence of the physical properties of epitaxial la<inf>0.7</inf>ca<inf>0.3</inf>mno<inf>3</inf> thin films grown on laalo<inf>3</inf> substrates |
| url |
http://hdl.handle.net/20.500.12110/paper_09258388_v655_n_p327_ElHelali |
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