L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions

Total L x-ray production cross sections have been measured in 74 W, 79 Au, 82 Pb, and 83 Bi by impact of 3–5 MeV/u 28 Si ions, with different charge states q = 8 + up to 12 + . We find that the measured cross sections do not differ with the charge state of the projectile ions, but they vary with the...

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Autores principales: Oswal, M., Kumar, S., Singh, U., Singh, G., Singh, K.P., Mehta, D., Mitnik, D., Montanari, C.C., Nandi, T.
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_0168583X_v416_n_p110_Oswal
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spelling todo:paper_0168583X_v416_n_p110_Oswal2023-10-03T15:06:33Z L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions Oswal, M. Kumar, S. Singh, U. Singh, G. Singh, K.P. Mehta, D. Mitnik, D. Montanari, C.C. Nandi, T. Heavy ions Ionization L-shell x-rays Multiple-ionization Heavy ions Ionization X ray scattering Beam energies Charge state L shell Low beam Multiple holes Multiple ionization Projectile ions Silicon ion X ray production Total L x-ray production cross sections have been measured in 74 W, 79 Au, 82 Pb, and 83 Bi by impact of 3–5 MeV/u 28 Si ions, with different charge states q = 8 + up to 12 + . We find that the measured cross sections do not differ with the charge state of the projectile ions, but they vary with the beam energies. The experimental data has been compared with three theoretical results, ECUSAR, ECPSSR and SLPA by using the multiple-hole fluorescence and Coster-Kronig yields. The comparison has showed the best agreement with the ECUSAR. The SLPA results also describe the experiments quite well for 74 W, 79 Au and 83 Bi, but certain differences are observed for 82 Pb, while the ECPSSR values underestimate by up to a factor two. Surprisingly, the theoretical-experimental agreement is better at low beam energies than in the high beam energy side. © 2017 Elsevier B.V. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_0168583X_v416_n_p110_Oswal
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Heavy ions
Ionization
L-shell x-rays
Multiple-ionization
Heavy ions
Ionization
X ray scattering
Beam energies
Charge state
L shell
Low beam
Multiple holes
Multiple ionization
Projectile ions
Silicon ion
X ray production
spellingShingle Heavy ions
Ionization
L-shell x-rays
Multiple-ionization
Heavy ions
Ionization
X ray scattering
Beam energies
Charge state
L shell
Low beam
Multiple holes
Multiple ionization
Projectile ions
Silicon ion
X ray production
Oswal, M.
Kumar, S.
Singh, U.
Singh, G.
Singh, K.P.
Mehta, D.
Mitnik, D.
Montanari, C.C.
Nandi, T.
L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
topic_facet Heavy ions
Ionization
L-shell x-rays
Multiple-ionization
Heavy ions
Ionization
X ray scattering
Beam energies
Charge state
L shell
Low beam
Multiple holes
Multiple ionization
Projectile ions
Silicon ion
X ray production
description Total L x-ray production cross sections have been measured in 74 W, 79 Au, 82 Pb, and 83 Bi by impact of 3–5 MeV/u 28 Si ions, with different charge states q = 8 + up to 12 + . We find that the measured cross sections do not differ with the charge state of the projectile ions, but they vary with the beam energies. The experimental data has been compared with three theoretical results, ECUSAR, ECPSSR and SLPA by using the multiple-hole fluorescence and Coster-Kronig yields. The comparison has showed the best agreement with the ECUSAR. The SLPA results also describe the experiments quite well for 74 W, 79 Au and 83 Bi, but certain differences are observed for 82 Pb, while the ECPSSR values underestimate by up to a factor two. Surprisingly, the theoretical-experimental agreement is better at low beam energies than in the high beam energy side. © 2017 Elsevier B.V.
format JOUR
author Oswal, M.
Kumar, S.
Singh, U.
Singh, G.
Singh, K.P.
Mehta, D.
Mitnik, D.
Montanari, C.C.
Nandi, T.
author_facet Oswal, M.
Kumar, S.
Singh, U.
Singh, G.
Singh, K.P.
Mehta, D.
Mitnik, D.
Montanari, C.C.
Nandi, T.
author_sort Oswal, M.
title L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
title_short L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
title_full L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
title_fullStr L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
title_full_unstemmed L x-ray production cross sections in high-Z atoms by 3–5 MeV/u silicon ions
title_sort l x-ray production cross sections in high-z atoms by 3–5 mev/u silicon ions
url http://hdl.handle.net/20.500.12110/paper_0168583X_v416_n_p110_Oswal
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