On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

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We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermo...

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Detalles Bibliográficos
Autores principales:	Fierens, P.I., Patterson, G.A., Bellomo, G., Grosz, D.F.
Formato:	CONF
Materias:	Memory device Stochastic resonance
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_0094243X_v1339_n_p298_Fierens
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spelling	todo:paper_0094243X_v1339_n_p298_Fierens2023-10-03T14:56:02Z On the effect of noise and electronics bandwidth on a stochastic-resonance memory device Fierens, P.I. Patterson, G.A. Bellomo, G. Grosz, D.F. Memory device Stochastic resonance We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the influence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise. © 2011 American Institute of Physics. Fil:Grosz, D.F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Memory device Stochastic resonance
spellingShingle	Memory device Stochastic resonance Fierens, P.I. Patterson, G.A. Bellomo, G. Grosz, D.F. On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
topic_facet	Memory device Stochastic resonance
description	We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the influence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise. © 2011 American Institute of Physics.
format	CONF
author	Fierens, P.I. Patterson, G.A. Bellomo, G. Grosz, D.F.
author_facet	Fierens, P.I. Patterson, G.A. Bellomo, G. Grosz, D.F.
author_sort	Fierens, P.I.
title	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_short	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_fullStr	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full_unstemmed	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_sort	on the effect of noise and electronics bandwidth on a stochastic-resonance memory device
url	http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
work_keys_str_mv	AT fierenspi ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT pattersonga ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT bellomog ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT groszdf ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice
_version_	1782023685378408448

On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

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