BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior

We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and st...

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Autores principales: Román, A., Rengifo, M., Saleh Medina, L.M., Reinoso, M., Negri, R.M., Steren, L.B., Rubi, D.
Formato: JOUR
Materias:
BaTiO3
Memristive oxides
Thin films on silicon
Barium compounds
Ferroelectric films
Ferroelectricity
Memristors
Microstructure
Pulsed laser deposition
Pulsed lasers
Silicon
Stoichiometry
Batio
Fabrication and characterizations
Ferroelectric order
Laser-pulse energy
Oxidation/reduction
Platinized silicon
Resistive switching
Tetragonal distortion
Thin films
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_00406090_v628_n_p208_Roman2023-10-03T14:51:09Z BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior Román, A. Rengifo, M. Saleh Medina, L.M. Reinoso, M. Negri, R.M. Steren, L.B. Rubi, D. BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V. Fil:Saleh Medina, L.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Reinoso, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Negri, R.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic BaTiO3
Memristive oxides
Thin films on silicon
Barium compounds
Ferroelectric films
Ferroelectricity
Memristors
Microstructure
Pulsed laser deposition
Pulsed lasers
Silicon
Stoichiometry
Batio
Fabrication and characterizations
Ferroelectric order
Laser-pulse energy
Oxidation/reduction
Platinized silicon
Resistive switching
Tetragonal distortion
Thin films
spellingShingle BaTiO3
Memristive oxides
Thin films on silicon
Barium compounds
Ferroelectric films
Ferroelectricity
Memristors
Microstructure
Pulsed laser deposition
Pulsed lasers
Silicon
Stoichiometry
Batio
Fabrication and characterizations
Ferroelectric order
Laser-pulse energy
Oxidation/reduction
Platinized silicon
Resistive switching
Tetragonal distortion
Thin films
Román, A.
Rengifo, M.
Saleh Medina, L.M.
Reinoso, M.
Negri, R.M.
Steren, L.B.
Rubi, D.
BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
topic_facet BaTiO3
Memristive oxides
Thin films on silicon
Barium compounds
Ferroelectric films
Ferroelectricity
Memristors
Microstructure
Pulsed laser deposition
Pulsed lasers
Silicon
Stoichiometry
Batio
Fabrication and characterizations
Ferroelectric order
Laser-pulse energy
Oxidation/reduction
Platinized silicon
Resistive switching
Tetragonal distortion
Thin films
description We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V.
format JOUR
author Román, A.
Rengifo, M.
Saleh Medina, L.M.
Reinoso, M.
Negri, R.M.
Steren, L.B.
Rubi, D.
author_facet Román, A.
Rengifo, M.
Saleh Medina, L.M.
Reinoso, M.
Negri, R.M.
Steren, L.B.
Rubi, D.
author_sort Román, A.
title BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_short BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_full BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_fullStr BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_full_unstemmed BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_sort batio3 thin films on platinized silicon: growth, characterization and resistive memory behavior
url http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
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AT rengifom batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
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AT reinosom batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
AT negrirm batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
AT sterenlb batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
AT rubid batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
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