Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction

We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acousti...

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Autores principales: Alcalde, A.M., Romano, C.L., Marques, G.E.
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde
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spelling todo:paper_00381098_v148_n5-6_p255_Alcalde2023-10-03T14:49:04Z Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction Alcalde, A.M. Romano, C.L. Marques, G.E. A. Nanostructures A. Semiconductors D. Electron-phonon interactions Computer networks Crystals Deformation Electric conductivity Flow interactions Gallium alloys Indium arsenide Inverse kinematics Modulation Optical waveguides Orbits Piezoelectricity Quantum electronics Semiconductor materials Semiconductor quantum dots A. Nanostructures A. Semiconductors D. Electron-phonon interactions Spin-relaxation rates Spin dynamics We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement. © 2008 Elsevier Ltd. All rights reserved. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Computer networks
Crystals
Deformation
Electric conductivity
Flow interactions
Gallium alloys
Indium arsenide
Inverse kinematics
Modulation
Optical waveguides
Orbits
Piezoelectricity
Quantum electronics
Semiconductor materials
Semiconductor quantum dots
A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Spin-relaxation rates
Spin dynamics
spellingShingle A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Computer networks
Crystals
Deformation
Electric conductivity
Flow interactions
Gallium alloys
Indium arsenide
Inverse kinematics
Modulation
Optical waveguides
Orbits
Piezoelectricity
Quantum electronics
Semiconductor materials
Semiconductor quantum dots
A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Spin-relaxation rates
Spin dynamics
Alcalde, A.M.
Romano, C.L.
Marques, G.E.
Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
topic_facet A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Computer networks
Crystals
Deformation
Electric conductivity
Flow interactions
Gallium alloys
Indium arsenide
Inverse kinematics
Modulation
Optical waveguides
Orbits
Piezoelectricity
Quantum electronics
Semiconductor materials
Semiconductor quantum dots
A. Nanostructures
A. Semiconductors
D. Electron-phonon interactions
Spin-relaxation rates
Spin dynamics
description We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement. © 2008 Elsevier Ltd. All rights reserved.
format JOUR
author Alcalde, A.M.
Romano, C.L.
Marques, G.E.
author_facet Alcalde, A.M.
Romano, C.L.
Marques, G.E.
author_sort Alcalde, A.M.
title Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
title_short Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
title_full Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
title_fullStr Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
title_full_unstemmed Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction
title_sort spin relaxation rates in quantum dots: role of the phonon modulated spin-orbit interaction
url http://hdl.handle.net/20.500.12110/paper_00381098_v148_n5-6_p255_Alcalde
work_keys_str_mv AT alcaldeam spinrelaxationratesinquantumdotsroleofthephononmodulatedspinorbitinteraction
AT romanocl spinrelaxationratesinquantumdotsroleofthephononmodulatedspinorbitinteraction
AT marquesge spinrelaxationratesinquantumdotsroleofthephononmodulatedspinorbitinteraction
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