Adaptive threshold in TiO 2 -based synapses

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We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO 2 /Au and Ni/TiO 2 /Ni/Au memory devices in order to understand the conduction mechanisms and their synapse-like memory properties. Current levels and switching threshold voltages are strongly affected by the metal us...

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Detalles Bibliográficos
Autores principales:	Ghenzi, N., Barella, M., Rubi, D., Acha, C.
Formato:	JOUR
Materias:	electrical circuit modelling memristor resistive switching synapse emulation Circuit simulation Electrodes Memristors Titanium dioxide Adaptive thresholds Conduction Mechanism Current-voltage response Electrical circuit Memristor Resistive switching Switching threshold voltage Threshold voltage
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00223727_v52_n12_p_Ghenzi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00223727_v52_n12_p_Ghenzi
record_format	dspace
spelling	todo:paper_00223727_v52_n12_p_Ghenzi2023-10-03T14:32:27Z Adaptive threshold in TiO 2 -based synapses Ghenzi, N. Barella, M. Rubi, D. Acha, C. electrical circuit modelling memristor resistive switching synapse emulation Circuit simulation Electrodes Memristors Titanium dioxide Adaptive thresholds Conduction Mechanism Current-voltage response Electrical circuit Memristor Resistive switching Switching threshold voltage synapse emulation Threshold voltage We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO 2 /Au and Ni/TiO 2 /Ni/Au memory devices in order to understand the conduction mechanisms and their synapse-like memory properties. Current levels and switching threshold voltages are strongly affected by the metal used for the electrode. We propose a non-trivial circuit model which captures in detail the current-voltage response of both kinds of devices. We found that, for the former device, the voltage threshold can be maintained constant, independently of the applied voltage history, while for the latter, a limiting resistor controls the threshold voltages behavior, being the origin of their dependence on the resistance value previous to the switching. The identification of the conduction mechanisms across the device allows optimizing the memristor performance and determining the best electrode choice to improve the device synapse-emulation abilities. © 2019 IOP Publishing Ltd. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00223727_v52_n12_p_Ghenzi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	electrical circuit modelling memristor resistive switching synapse emulation Circuit simulation Electrodes Memristors Titanium dioxide Adaptive thresholds Conduction Mechanism Current-voltage response Electrical circuit Memristor Resistive switching Switching threshold voltage synapse emulation Threshold voltage
spellingShingle	electrical circuit modelling memristor resistive switching synapse emulation Circuit simulation Electrodes Memristors Titanium dioxide Adaptive thresholds Conduction Mechanism Current-voltage response Electrical circuit Memristor Resistive switching Switching threshold voltage synapse emulation Threshold voltage Ghenzi, N. Barella, M. Rubi, D. Acha, C. Adaptive threshold in TiO 2 -based synapses
topic_facet	electrical circuit modelling memristor resistive switching synapse emulation Circuit simulation Electrodes Memristors Titanium dioxide Adaptive thresholds Conduction Mechanism Current-voltage response Electrical circuit Memristor Resistive switching Switching threshold voltage synapse emulation Threshold voltage
description	We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO 2 /Au and Ni/TiO 2 /Ni/Au memory devices in order to understand the conduction mechanisms and their synapse-like memory properties. Current levels and switching threshold voltages are strongly affected by the metal used for the electrode. We propose a non-trivial circuit model which captures in detail the current-voltage response of both kinds of devices. We found that, for the former device, the voltage threshold can be maintained constant, independently of the applied voltage history, while for the latter, a limiting resistor controls the threshold voltages behavior, being the origin of their dependence on the resistance value previous to the switching. The identification of the conduction mechanisms across the device allows optimizing the memristor performance and determining the best electrode choice to improve the device synapse-emulation abilities. © 2019 IOP Publishing Ltd.
format	JOUR
author	Ghenzi, N. Barella, M. Rubi, D. Acha, C.
author_facet	Ghenzi, N. Barella, M. Rubi, D. Acha, C.
author_sort	Ghenzi, N.
title	Adaptive threshold in TiO 2 -based synapses
title_short	Adaptive threshold in TiO 2 -based synapses
title_full	Adaptive threshold in TiO 2 -based synapses
title_fullStr	Adaptive threshold in TiO 2 -based synapses
title_full_unstemmed	Adaptive threshold in TiO 2 -based synapses
title_sort	adaptive threshold in tio 2 -based synapses
url	http://hdl.handle.net/20.500.12110/paper_00223727_v52_n12_p_Ghenzi
work_keys_str_mv	AT ghenzin adaptivethresholdintio2basedsynapses AT barellam adaptivethresholdintio2basedsynapses AT rubid adaptivethresholdintio2basedsynapses AT achac adaptivethresholdintio2basedsynapses
_version_	1782027224059215872

Adaptive threshold in TiO 2 -based synapses

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