Oxidation-induced stresses in the isolation oxidation of silicon
The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varyi...
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todo:paper_00220833_v38_n2_p191_Evans2023-10-03T14:25:59Z Oxidation-induced stresses in the isolation oxidation of silicon Evans, J.D. Vynnycky, M. Ferro, S.P. Keller-Box discretisation scheme Numerical finite differences Oxidation-induced stresses Silicon oxidation Approximation theory Finite difference method Interfaces (materials) Mathematical models Problem solving Silicon Isolation oxidation Keller-Box discretization method Oxidation oxidation The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretisation scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called 'bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results. The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretization scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called `bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00220833_v38_n2_p191_Evans |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Keller-Box discretisation scheme Numerical finite differences Oxidation-induced stresses Silicon oxidation Approximation theory Finite difference method Interfaces (materials) Mathematical models Problem solving Silicon Isolation oxidation Keller-Box discretization method Oxidation oxidation |
| spellingShingle |
Keller-Box discretisation scheme Numerical finite differences Oxidation-induced stresses Silicon oxidation Approximation theory Finite difference method Interfaces (materials) Mathematical models Problem solving Silicon Isolation oxidation Keller-Box discretization method Oxidation oxidation Evans, J.D. Vynnycky, M. Ferro, S.P. Oxidation-induced stresses in the isolation oxidation of silicon |
| topic_facet |
Keller-Box discretisation scheme Numerical finite differences Oxidation-induced stresses Silicon oxidation Approximation theory Finite difference method Interfaces (materials) Mathematical models Problem solving Silicon Isolation oxidation Keller-Box discretization method Oxidation oxidation |
| description |
The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretisation scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called 'bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results. The two-dimensional isolation oxidation of silicon is studied in the reaction-controlled limit, which corresponds to the case of initially thin oxides. This limit is both of physical relevance and one of the few regimes in which analytical progress can be made in the whole oxide region. Slowly-varying or long-wave approximations can be used to derive equations that govern the growth of the oxide interfaces (which form two moving boundaries) and the oxidation-induced stresses in the oxide. Here, these equations are solved numerically, by use of a Keller-Box discretization scheme, complementing previously obtained asymptotic results. The numerical scheme is used to investigate the effects of the nitride-cap rigidity and the initial oxide thickness on both the lateral extent of oxidation (the so-called `bird's beak' length) and the stresses that occur on the silicon/silicon-oxide interface. The results from the model are interpreted in dimensional form so that quantitative comparisons can be made with experimental results. |
| format |
JOUR |
| author |
Evans, J.D. Vynnycky, M. Ferro, S.P. |
| author_facet |
Evans, J.D. Vynnycky, M. Ferro, S.P. |
| author_sort |
Evans, J.D. |
| title |
Oxidation-induced stresses in the isolation oxidation of silicon |
| title_short |
Oxidation-induced stresses in the isolation oxidation of silicon |
| title_full |
Oxidation-induced stresses in the isolation oxidation of silicon |
| title_fullStr |
Oxidation-induced stresses in the isolation oxidation of silicon |
| title_full_unstemmed |
Oxidation-induced stresses in the isolation oxidation of silicon |
| title_sort |
oxidation-induced stresses in the isolation oxidation of silicon |
| url |
http://hdl.handle.net/20.500.12110/paper_00220833_v38_n2_p191_Evans |
| work_keys_str_mv |
AT evansjd oxidationinducedstressesintheisolationoxidationofsilicon AT vynnyckym oxidationinducedstressesintheisolationoxidationofsilicon AT ferrosp oxidationinducedstressesintheisolationoxidationofsilicon |
| _version_ |
1782024107514134528 |