Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a...

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Autores principales:	Gilabert, U., Moyano, E., Scarpettini, A., Trigubó, A.B.
Formato:	JOUR
Materias:	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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spelling	todo:paper_00220248_v312_n9_p1481_Gilabert2023-10-03T14:25:25Z Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations Gilabert, U. Moyano, E. Scarpettini, A. Trigubó, A.B. A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion-convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD. © 2010 Elsevier B.V. All rights reserved. Fil:Gilabert, U. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Scarpettini, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Trigubó, A.B. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
spellingShingle	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth Gilabert, U. Moyano, E. Scarpettini, A. Trigubó, A.B. Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
topic_facet	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
description	Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion-convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD. © 2010 Elsevier B.V. All rights reserved.
format	JOUR
author	Gilabert, U. Moyano, E. Scarpettini, A. Trigubó, A.B.
author_facet	Gilabert, U. Moyano, E. Scarpettini, A. Trigubó, A.B.
author_sort	Gilabert, U.
title	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_short	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_fullStr	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full_unstemmed	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_sort	growth kinetics of isovpe hgcdte epilayers obtained on alloyed cdte substrates with different crystalline orientations
url	http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
work_keys_str_mv	AT gilabertu growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations AT moyanoe growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations AT scarpettinia growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations AT triguboab growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations
_version_	1807319361977843712

Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

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