Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices

Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)] of Au/YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-</inf><inf>δ</inf> (optimally doped YBCO) interfaces have been studied at different resistance states. These...

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Autores principales: Schulman, A., Lanosa, L.F., Acha, C.
Formato: JOUR
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v118_n4_p_Schulman
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spelling todo:paper_00218979_v118_n4_p_Schulman2023-10-03T14:22:16Z Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices Schulman, A. Lanosa, L.F. Acha, C. Switching systems Temperature distribution Yttrium barium copper oxides Electrical conduction Electrical transport Poole-Frenkel effect Poole-Frenkel emission Resistive switching devices Temperature dependence Variable range hopping Variable-range hopping conduction Interface states Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)] of Au/YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-</inf><inf>δ</inf> (optimally doped YBCO) interfaces have been studied at different resistance states. These states were produced by resistive switching after accumulating cyclic electrical pulses of increasing number and voltage amplitude. The IV characteristics and the R(T) dependence of the different states are consistent with a Poole-Frenkel (P-F) emission mechanism with trapping-energy levels E<inf>t</inf> in the 0.06-0.11 V range. E<inf>t</inf> remains constant up to a number-of-pulses-dependent critical voltage and increases linearly with a further increase in the voltage amplitude of the pulses. The observation of a P-F mechanism reveals the existence of an oxygen-depleted layer of YBCO near the interface. A simple electrical transport scenario is discussed, where the degree of disorder, the trap energy level, and the temperature range determine an electrical conduction dominated by non-linear effects, either in a P-F emission or in a variable-range hopping regime. © 2015 AIP Publishing LLC. Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00218979_v118_n4_p_Schulman
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Switching systems
Temperature distribution
Yttrium barium copper oxides
Electrical conduction
Electrical transport
Poole-Frenkel effect
Poole-Frenkel emission
Resistive switching devices
Temperature dependence
Variable range hopping
Variable-range hopping conduction
Interface states
spellingShingle Switching systems
Temperature distribution
Yttrium barium copper oxides
Electrical conduction
Electrical transport
Poole-Frenkel effect
Poole-Frenkel emission
Resistive switching devices
Temperature dependence
Variable range hopping
Variable-range hopping conduction
Interface states
Schulman, A.
Lanosa, L.F.
Acha, C.
Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
topic_facet Switching systems
Temperature distribution
Yttrium barium copper oxides
Electrical conduction
Electrical transport
Poole-Frenkel effect
Poole-Frenkel emission
Resistive switching devices
Temperature dependence
Variable range hopping
Variable-range hopping conduction
Interface states
description Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [R(T)] of Au/YBa<inf>2</inf>Cu<inf>3</inf>O<inf>7-</inf><inf>δ</inf> (optimally doped YBCO) interfaces have been studied at different resistance states. These states were produced by resistive switching after accumulating cyclic electrical pulses of increasing number and voltage amplitude. The IV characteristics and the R(T) dependence of the different states are consistent with a Poole-Frenkel (P-F) emission mechanism with trapping-energy levels E<inf>t</inf> in the 0.06-0.11 V range. E<inf>t</inf> remains constant up to a number-of-pulses-dependent critical voltage and increases linearly with a further increase in the voltage amplitude of the pulses. The observation of a P-F mechanism reveals the existence of an oxygen-depleted layer of YBCO near the interface. A simple electrical transport scenario is discussed, where the degree of disorder, the trap energy level, and the temperature range determine an electrical conduction dominated by non-linear effects, either in a P-F emission or in a variable-range hopping regime. © 2015 AIP Publishing LLC.
format JOUR
author Schulman, A.
Lanosa, L.F.
Acha, C.
author_facet Schulman, A.
Lanosa, L.F.
Acha, C.
author_sort Schulman, A.
title Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
title_short Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
title_full Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
title_fullStr Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
title_full_unstemmed Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
title_sort poole-frenkel effect and variable-range hopping conduction in metal/ybco resistive switching devices
url http://hdl.handle.net/20.500.12110/paper_00218979_v118_n4_p_Schulman
work_keys_str_mv AT schulmana poolefrenkeleffectandvariablerangehoppingconductioninmetalybcoresistiveswitchingdevices
AT lanosalf poolefrenkeleffectandvariablerangehoppingconductioninmetalybcoresistiveswitchingdevices
AT achac poolefrenkeleffectandvariablerangehoppingconductioninmetalybcoresistiveswitchingdevices
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