Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

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We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repe...

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Autores principales: Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Formato: JOUR
Materias:
High resistance
High-resistance state
Low-resistance state
Model simulation
Multipulses
Nonvolatile memory devices
Oxide interfaces
Resistance state
Resistance values
Resistive switching
Room temperature
Time constants
Computer simulation
Interface states
Manganese oxide
Experiments
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_00218979_v111_n8_p_Ghenzi2023-10-03T14:22:13Z Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol Ghenzi, N. Snchez, M.J. Rozenberg, M.J. Stoliar, P. Marlasca, F.G. Rubi, D. Levy, P. High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic High resistance
High-resistance state
Low-resistance state
Model simulation
Multipulses
Nonvolatile memory devices
Oxide interfaces
Resistance state
Resistance values
Resistive switching
Room temperature
Time constants
Computer simulation
Interface states
Manganese oxide
Experiments
spellingShingle High resistance
High-resistance state
Low-resistance state
Model simulation
Multipulses
Nonvolatile memory devices
Oxide interfaces
Resistance state
Resistance values
Resistive switching
Room temperature
Time constants
Computer simulation
Interface states
Manganese oxide
Experiments
Ghenzi, N.
Snchez, M.J.
Rozenberg, M.J.
Stoliar, P.
Marlasca, F.G.
Rubi, D.
Levy, P.
Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
topic_facet High resistance
High-resistance state
Low-resistance state
Model simulation
Multipulses
Nonvolatile memory devices
Oxide interfaces
Resistance state
Resistance values
Resistive switching
Room temperature
Time constants
Computer simulation
Interface states
Manganese oxide
Experiments
description We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics.
format JOUR
author Ghenzi, N.
Snchez, M.J.
Rozenberg, M.J.
Stoliar, P.
Marlasca, F.G.
Rubi, D.
Levy, P.
author_facet Ghenzi, N.
Snchez, M.J.
Rozenberg, M.J.
Stoliar, P.
Marlasca, F.G.
Rubi, D.
Levy, P.
author_sort Ghenzi, N.
title Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_short Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_full Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_fullStr Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_full_unstemmed Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_sort optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
url http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
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