Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.

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Detalles Bibliográficos
Autores principales:	Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., Palumbo, F., Campabadal, F.
Formato:	JOUR
Materias:	High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric Nanolaminate Oxygen ions Alumina Hafnium oxides Radiation effects Capacitance
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00189499_v59_n4PART1_p767_Quinteros
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spelling	todo:paper_00189499_v59_n4PART1_p767_Quinteros2023-10-03T14:16:23Z Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation Quinteros, C.P. Salomone, L.S. Redin, E. Rafí, J.M. Zabala, M. Faigón, A. Palumbo, F. Campabadal, F. High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance
spellingShingle	High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance Quinteros, C.P. Salomone, L.S. Redin, E. Rafí, J.M. Zabala, M. Faigón, A. Palumbo, F. Campabadal, F. Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
topic_facet	High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance
description	MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.
format	JOUR
author	Quinteros, C.P. Salomone, L.S. Redin, E. Rafí, J.M. Zabala, M. Faigón, A. Palumbo, F. Campabadal, F.
author_facet	Quinteros, C.P. Salomone, L.S. Redin, E. Rafí, J.M. Zabala, M. Faigón, A. Palumbo, F. Campabadal, F.
author_sort	Quinteros, C.P.
title	Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_short	Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_full	Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_fullStr	Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_full_unstemmed	Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_sort	comparative analysis of mis capacitance structures with high-k dielectrics under gamma, 16o and p radiation
url	http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros
work_keys_str_mv	AT quinteroscp comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT salomonels comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT redine comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT rafijm comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT zabalam comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT faigona comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT palumbof comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation AT campabadalf comparativeanalysisofmiscapacitancestructureswithhighkdielectricsundergamma16oandpradiation
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Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

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