Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of...

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Autores principales:	Gomez-Marlasca, F., Ghenzi, N., Stoliar, P., Sánchez, M.J., Rozenberg, M.J., Leyva, G., Levy, P.
Formato:	JOUR
Materias:	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00036951_v98_n12_p_GomezMarlasca
record_format	dspace
spelling	todo:paper_00036951_v98_n12_p_GomezMarlasca2023-10-03T13:56:38Z Asymmetric pulsing for reliable operation of titanium/manganite memristors Gomez-Marlasca, F. Ghenzi, N. Stoliar, P. Sánchez, M.J. Rozenberg, M.J. Leyva, G. Levy, P. Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles. © 2011 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
spellingShingle	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies Gomez-Marlasca, F. Ghenzi, N. Stoliar, P. Sánchez, M.J. Rozenberg, M.J. Leyva, G. Levy, P. Asymmetric pulsing for reliable operation of titanium/manganite memristors
topic_facet	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
description	We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles. © 2011 American Institute of Physics.
format	JOUR
author	Gomez-Marlasca, F. Ghenzi, N. Stoliar, P. Sánchez, M.J. Rozenberg, M.J. Leyva, G. Levy, P.
author_facet	Gomez-Marlasca, F. Ghenzi, N. Stoliar, P. Sánchez, M.J. Rozenberg, M.J. Leyva, G. Levy, P.
author_sort	Gomez-Marlasca, F.
title	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_short	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_full	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_fullStr	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_full_unstemmed	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_sort	asymmetric pulsing for reliable operation of titanium/manganite memristors
url	http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
work_keys_str_mv	AT gomezmarlascaf asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT ghenzin asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT stoliarp asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT sanchezmj asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT rozenbergmj asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT leyvag asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT levyp asymmetricpulsingforreliableoperationoftitaniummanganitememristors
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Asymmetric pulsing for reliable operation of titanium/manganite memristors

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