A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface a...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | JOUR |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez |
| Aporte de: |
| id |
todo:paper_00036951_v91_n25_p_Sanchez |
|---|---|
| record_format |
dspace |
| spelling |
todo:paper_00036951_v91_n25_p_Sanchez2023-10-03T13:56:36Z A mechanism for unipolar resistance switching in oxide nonvolatile memory devices Sánchez, M.J. Rozenberg, M.J. Inoue, I.H. Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. © 2007 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching |
| spellingShingle |
Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching Sánchez, M.J. Rozenberg, M.J. Inoue, I.H. A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| topic_facet |
Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching |
| description |
We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. © 2007 American Institute of Physics. |
| format |
JOUR |
| author |
Sánchez, M.J. Rozenberg, M.J. Inoue, I.H. |
| author_facet |
Sánchez, M.J. Rozenberg, M.J. Inoue, I.H. |
| author_sort |
Sánchez, M.J. |
| title |
A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| title_short |
A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| title_full |
A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| title_fullStr |
A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| title_full_unstemmed |
A mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| title_sort |
mechanism for unipolar resistance switching in oxide nonvolatile memory devices |
| url |
http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez |
| work_keys_str_mv |
AT sanchezmj amechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT rozenbergmj amechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT inoueih amechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT sanchezmj mechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT rozenbergmj mechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT inoueih mechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices |
| _version_ |
1782029268872593408 |