Transport mechanism through metal-cobaltite interfaces

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The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temper...

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Autores principales: Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T.
Formato: JOUR
Materias:
Cobalt compounds
Dielectric properties
Ohmic contacts
Organometallics
Circuit modeling
High-resistance state
Insulating phasis
Metal organic deposition
Microscopic description
Resistive switching
Temperature dependence
Transport mechanism
Temperature distribution
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_00036951_v109_n1_p_Acha
record_format dspace
spelling todo:paper_00036951_v109_n1_p_Acha2023-10-03T13:56:34Z Transport mechanism through metal-cobaltite interfaces Acha, C. Schulman, A. Boudard, M. Daoudi, K. Tsuchiya, T. Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s). Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Cobalt compounds
Dielectric properties
Ohmic contacts
Organometallics
Circuit modeling
High-resistance state
Insulating phasis
Metal organic deposition
Microscopic description
Resistive switching
Temperature dependence
Transport mechanism
Temperature distribution
spellingShingle Cobalt compounds
Dielectric properties
Ohmic contacts
Organometallics
Circuit modeling
High-resistance state
Insulating phasis
Metal organic deposition
Microscopic description
Resistive switching
Temperature dependence
Transport mechanism
Temperature distribution
Acha, C.
Schulman, A.
Boudard, M.
Daoudi, K.
Tsuchiya, T.
Transport mechanism through metal-cobaltite interfaces
topic_facet Cobalt compounds
Dielectric properties
Ohmic contacts
Organometallics
Circuit modeling
High-resistance state
Insulating phasis
Metal organic deposition
Microscopic description
Resistive switching
Temperature dependence
Transport mechanism
Temperature distribution
description The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s).
format JOUR
author Acha, C.
Schulman, A.
Boudard, M.
Daoudi, K.
Tsuchiya, T.
author_facet Acha, C.
Schulman, A.
Boudard, M.
Daoudi, K.
Tsuchiya, T.
author_sort Acha, C.
title Transport mechanism through metal-cobaltite interfaces
title_short Transport mechanism through metal-cobaltite interfaces
title_full Transport mechanism through metal-cobaltite interfaces
title_fullStr Transport mechanism through metal-cobaltite interfaces
title_full_unstemmed Transport mechanism through metal-cobaltite interfaces
title_sort transport mechanism through metal-cobaltite interfaces
url http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
work_keys_str_mv AT achac transportmechanismthroughmetalcobaltiteinterfaces
AT schulmana transportmechanismthroughmetalcobaltiteinterfaces
AT boudardm transportmechanismthroughmetalcobaltiteinterfaces
AT daoudik transportmechanismthroughmetalcobaltiteinterfaces
AT tsuchiyat transportmechanismthroughmetalcobaltiteinterfaces
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