Theoretical study of the adsorption of H on Si n clusters, (n=3-10)

A recently proposed local Fukui function is used to predict the binding site of atomic hydrogen on silicon clusters. To validate the predictions, an extensive search for the more stable Sin H (n=3-10) clusters has been done using a modified genetic algorithm. In all cases, the isomer predicted by th...

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Autores principales: Tiznado, W., Ona, O.B., Bazterra, V.E., Caputo, M.C., Facelli, J.C., Ferraro, M.B., Fuentealba, P.
Formato: Artículo publishedVersion
Lenguaje:Inglés
Publicado: 2005
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00219606_v123_n21_p_Tiznado
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spelling paperaa:paper_00219606_v123_n21_p_Tiznado2023-06-12T16:43:14Z Theoretical study of the adsorption of H on Si n clusters, (n=3-10) J Chem Phys 2005;123(21) Tiznado, W. Ona, O.B. Bazterra, V.E. Caputo, M.C. Facelli, J.C. Ferraro, M.B. Fuentealba, P. Fukui function Relaxation effects Silicon clusters Adsorption Genetic algorithms Hydrogen Relaxation processes Silicon Atomic physics hydrogen silicon adsorption algorithm article binding site chemistry theoretical model Adsorption Algorithms Binding Sites Hydrogen Models, Theoretical Silicon A recently proposed local Fukui function is used to predict the binding site of atomic hydrogen on silicon clusters. To validate the predictions, an extensive search for the more stable Sin H (n=3-10) clusters has been done using a modified genetic algorithm. In all cases, the isomer predicted by the Fukui function is found by the search, but it is not always the most stable one. It is discussed that in the cases where the geometrical structure of the bare silicon cluster suffers a considerable change due to the addition of one hydrogen atom, the situation is more complicated and the relaxation effects should be considered. © 2005 American Institute of Physics. Fil:Ona, O.B. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Bazterra, V.E. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Caputo, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Facelli, J.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Ferraro, M.B. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2005 info:eu-repo/semantics/article info:ar-repo/semantics/artículo info:eu-repo/semantics/publishedVersion application/pdf eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00219606_v123_n21_p_Tiznado
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
language Inglés
orig_language_str_mv eng
topic Fukui function
Relaxation effects
Silicon clusters
Adsorption
Genetic algorithms
Hydrogen
Relaxation processes
Silicon
Atomic physics
hydrogen
silicon
adsorption
algorithm
article
binding site
chemistry
theoretical model
Adsorption
Algorithms
Binding Sites
Hydrogen
Models, Theoretical
Silicon
spellingShingle Fukui function
Relaxation effects
Silicon clusters
Adsorption
Genetic algorithms
Hydrogen
Relaxation processes
Silicon
Atomic physics
hydrogen
silicon
adsorption
algorithm
article
binding site
chemistry
theoretical model
Adsorption
Algorithms
Binding Sites
Hydrogen
Models, Theoretical
Silicon
Tiznado, W.
Ona, O.B.
Bazterra, V.E.
Caputo, M.C.
Facelli, J.C.
Ferraro, M.B.
Fuentealba, P.
Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
topic_facet Fukui function
Relaxation effects
Silicon clusters
Adsorption
Genetic algorithms
Hydrogen
Relaxation processes
Silicon
Atomic physics
hydrogen
silicon
adsorption
algorithm
article
binding site
chemistry
theoretical model
Adsorption
Algorithms
Binding Sites
Hydrogen
Models, Theoretical
Silicon
description A recently proposed local Fukui function is used to predict the binding site of atomic hydrogen on silicon clusters. To validate the predictions, an extensive search for the more stable Sin H (n=3-10) clusters has been done using a modified genetic algorithm. In all cases, the isomer predicted by the Fukui function is found by the search, but it is not always the most stable one. It is discussed that in the cases where the geometrical structure of the bare silicon cluster suffers a considerable change due to the addition of one hydrogen atom, the situation is more complicated and the relaxation effects should be considered. © 2005 American Institute of Physics.
format Artículo
Artículo
publishedVersion
author Tiznado, W.
Ona, O.B.
Bazterra, V.E.
Caputo, M.C.
Facelli, J.C.
Ferraro, M.B.
Fuentealba, P.
author_facet Tiznado, W.
Ona, O.B.
Bazterra, V.E.
Caputo, M.C.
Facelli, J.C.
Ferraro, M.B.
Fuentealba, P.
author_sort Tiznado, W.
title Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
title_short Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
title_full Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
title_fullStr Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
title_full_unstemmed Theoretical study of the adsorption of H on Si n clusters, (n=3-10)
title_sort theoretical study of the adsorption of h on si n clusters, (n=3-10)
publishDate 2005
url http://hdl.handle.net/20.500.12110/paper_00219606_v123_n21_p_Tiznado
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