Charge trapping/detrapping in HfO2-based MOS devices
The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to...
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2011
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone |
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paper:paper_97898716_v_n_p113_Salomone |
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paper:paper_97898716_v_n_p113_Salomone2023-06-08T16:39:15Z Charge trapping/detrapping in HfO2-based MOS devices High-K gate dielectrics hysteresis MOS devices Capacitance-voltage curve Charge trapping/detrapping High-k gate dielectrics Insulating layers Normal operating conditions Physical parameters Capacitance Gate dielectrics Hafnium oxides Hysteresis Nanoelectronics MOS devices The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS. 2011 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
High-K gate dielectrics hysteresis MOS devices Capacitance-voltage curve Charge trapping/detrapping High-k gate dielectrics Insulating layers Normal operating conditions Physical parameters Capacitance Gate dielectrics Hafnium oxides Hysteresis Nanoelectronics MOS devices |
| spellingShingle |
High-K gate dielectrics hysteresis MOS devices Capacitance-voltage curve Charge trapping/detrapping High-k gate dielectrics Insulating layers Normal operating conditions Physical parameters Capacitance Gate dielectrics Hafnium oxides Hysteresis Nanoelectronics MOS devices Charge trapping/detrapping in HfO2-based MOS devices |
| topic_facet |
High-K gate dielectrics hysteresis MOS devices Capacitance-voltage curve Charge trapping/detrapping High-k gate dielectrics Insulating layers Normal operating conditions Physical parameters Capacitance Gate dielectrics Hafnium oxides Hysteresis Nanoelectronics MOS devices |
| description |
The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS. |
| title |
Charge trapping/detrapping in HfO2-based MOS devices |
| title_short |
Charge trapping/detrapping in HfO2-based MOS devices |
| title_full |
Charge trapping/detrapping in HfO2-based MOS devices |
| title_fullStr |
Charge trapping/detrapping in HfO2-based MOS devices |
| title_full_unstemmed |
Charge trapping/detrapping in HfO2-based MOS devices |
| title_sort |
charge trapping/detrapping in hfo2-based mos devices |
| publishDate |
2011 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p113_Salomone http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone |
| _version_ |
1769175845099798528 |