Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of t...
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2009
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814244_v_n_p41_Lipovetzky http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky |
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paper:paper_97814244_v_n_p41_Lipovetzky2023-06-08T16:37:24Z Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature. 2009 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814244_v_n_p41_Lipovetzky http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation |
| spellingShingle |
Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| topic_facet |
Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation |
| description |
The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature. |
| title |
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| title_short |
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| title_full |
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| title_fullStr |
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| title_full_unstemmed |
Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| title_sort |
temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation |
| publishDate |
2009 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814244_v_n_p41_Lipovetzky http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky |
| _version_ |
1768546607191556096 |