Twisted-light-induced intersubband transitions in quantum wells at normal incidence

We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present...

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Autores principales: Quinteiro, Guillermo, Tamborenea, Pablo Ignacio
Publicado: 2013
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Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09538984_v25_n38_p_Sbierski
http://hdl.handle.net/20.500.12110/paper_09538984_v25_n38_p_Sbierski
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spelling paper:paper_09538984_v25_n38_p_Sbierski2023-06-08T15:55:39Z Twisted-light-induced intersubband transitions in quantum wells at normal incidence Quinteiro, Guillermo Tamborenea, Pablo Ignacio Collimated laser beams Intersubband transitions Light-matter interactions Orbital angular momentum Paraxial approximations Photoexcited electrons Propagation direction Semiconductor structure Angular momentum Electric fields Laser beams Semiconductor quantum wells We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the light's electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel type twisted light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photoexcited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for a given orbital angular momentum of the light beam in the case of small semiconductor structures. © 2013 IOP Publishing Ltd. Fil:Quinteiro, G.F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Tamborenea, P.I. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2013 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09538984_v25_n38_p_Sbierski http://hdl.handle.net/20.500.12110/paper_09538984_v25_n38_p_Sbierski
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Collimated laser beams
Intersubband transitions
Light-matter interactions
Orbital angular momentum
Paraxial approximations
Photoexcited electrons
Propagation direction
Semiconductor structure
Angular momentum
Electric fields
Laser beams
Semiconductor quantum wells
spellingShingle Collimated laser beams
Intersubband transitions
Light-matter interactions
Orbital angular momentum
Paraxial approximations
Photoexcited electrons
Propagation direction
Semiconductor structure
Angular momentum
Electric fields
Laser beams
Semiconductor quantum wells
Quinteiro, Guillermo
Tamborenea, Pablo Ignacio
Twisted-light-induced intersubband transitions in quantum wells at normal incidence
topic_facet Collimated laser beams
Intersubband transitions
Light-matter interactions
Orbital angular momentum
Paraxial approximations
Photoexcited electrons
Propagation direction
Semiconductor structure
Angular momentum
Electric fields
Laser beams
Semiconductor quantum wells
description We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the light's electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel type twisted light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photoexcited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for a given orbital angular momentum of the light beam in the case of small semiconductor structures. © 2013 IOP Publishing Ltd.
author Quinteiro, Guillermo
Tamborenea, Pablo Ignacio
author_facet Quinteiro, Guillermo
Tamborenea, Pablo Ignacio
author_sort Quinteiro, Guillermo
title Twisted-light-induced intersubband transitions in quantum wells at normal incidence
title_short Twisted-light-induced intersubband transitions in quantum wells at normal incidence
title_full Twisted-light-induced intersubband transitions in quantum wells at normal incidence
title_fullStr Twisted-light-induced intersubband transitions in quantum wells at normal incidence
title_full_unstemmed Twisted-light-induced intersubband transitions in quantum wells at normal incidence
title_sort twisted-light-induced intersubband transitions in quantum wells at normal incidence
publishDate 2013
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09538984_v25_n38_p_Sbierski
http://hdl.handle.net/20.500.12110/paper_09538984_v25_n38_p_Sbierski
work_keys_str_mv AT quinteiroguillermo twistedlightinducedintersubbandtransitionsinquantumwellsatnormalincidence
AT tamboreneapabloignacio twistedlightinducedintersubbandtransitionsinquantumwellsatnormalincidence
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