Interferometric lithography at 46.9 nm

We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference exper...

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Guardado en:
Detalles Bibliográficos
Publicado: 2004
Materias:
EUV lithography
Interferometric lithography
Nanopatterning
Electromagnetic wave diffraction
Electrons
Interferometry
Laser applications
Polymethyl methacrylates
Ultraviolet radiation
Laser source
Lithography
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v5622_nPART2_p735_Capeluto
http://hdl.handle.net/20.500.12110/paper_0277786X_v5622_nPART2_p735_Capeluto
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.

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