Interferometric lithography at 46.9 nm

We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference exper...

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Guardado en:
Detalles Bibliográficos
Publicado: 2004
Materias:
EUV lithography
Interferometric lithography
Nanopatterning
Electromagnetic wave diffraction
Electrons
Interferometry
Laser applications
Polymethyl methacrylates
Ultraviolet radiation
Laser source
Lithography
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v5622_nPART2_p735_Capeluto
http://hdl.handle.net/20.500.12110/paper_0277786X_v5622_nPART2_p735_Capeluto
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_0277786X_v5622_nPART2_p735_Capeluto
record_format dspace
spelling paper:paper_0277786X_v5622_nPART2_p735_Capeluto2023-06-08T15:26:22Z Interferometric lithography at 46.9 nm EUV lithography Interferometric lithography Nanopatterning Electromagnetic wave diffraction Electrons Interferometry Laser applications Polymethyl methacrylates Ultraviolet radiation EUV lithography Interferometric lithography Laser source Nanopatterning Lithography We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented. 2004 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v5622_nPART2_p735_Capeluto http://hdl.handle.net/20.500.12110/paper_0277786X_v5622_nPART2_p735_Capeluto
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic EUV lithography
Interferometric lithography
Nanopatterning
Electromagnetic wave diffraction
Electrons
Interferometry
Laser applications
Polymethyl methacrylates
Ultraviolet radiation
EUV lithography
Interferometric lithography
Laser source
Nanopatterning
Lithography
spellingShingle EUV lithography
Interferometric lithography
Nanopatterning
Electromagnetic wave diffraction
Electrons
Interferometry
Laser applications
Polymethyl methacrylates
Ultraviolet radiation
EUV lithography
Interferometric lithography
Laser source
Nanopatterning
Lithography
Interferometric lithography at 46.9 nm
topic_facet EUV lithography
Interferometric lithography
Nanopatterning
Electromagnetic wave diffraction
Electrons
Interferometry
Laser applications
Polymethyl methacrylates
Ultraviolet radiation
EUV lithography
Interferometric lithography
Laser source
Nanopatterning
Lithography
description We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.
title Interferometric lithography at 46.9 nm
title_short Interferometric lithography at 46.9 nm
title_full Interferometric lithography at 46.9 nm
title_fullStr Interferometric lithography at 46.9 nm
title_full_unstemmed Interferometric lithography at 46.9 nm
title_sort interferometric lithography at 46.9 nm
publishDate 2004
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v5622_nPART2_p735_Capeluto
http://hdl.handle.net/20.500.12110/paper_0277786X_v5622_nPART2_p735_Capeluto
_version_ 1768543228563292160

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