On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermo...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autor principal: Grosz, Diego Fernando
Publicado: 2011
Materias:
Memory device
Stochastic resonance
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0094243X_v1339_n_p298_Fierens
http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_0094243X_v1339_n_p298_Fierens
record_format dspace
spelling paper:paper_0094243X_v1339_n_p298_Fierens2023-06-08T15:09:11Z On the effect of noise and electronics bandwidth on a stochastic-resonance memory device Grosz, Diego Fernando Memory device Stochastic resonance We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the influence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise. © 2011 American Institute of Physics. Fil:Grosz, D.F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2011 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0094243X_v1339_n_p298_Fierens http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Memory device
Stochastic resonance
spellingShingle Memory device
Stochastic resonance
Grosz, Diego Fernando
On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
topic_facet Memory device
Stochastic resonance
description We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the influence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise. © 2011 American Institute of Physics.
author Grosz, Diego Fernando
author_facet Grosz, Diego Fernando
author_sort Grosz, Diego Fernando
title On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_short On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_fullStr On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full_unstemmed On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_sort on the effect of noise and electronics bandwidth on a stochastic-resonance memory device
publishDate 2011
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0094243X_v1339_n_p298_Fierens
http://hdl.handle.net/20.500.12110/paper_0094243X_v1339_n_p298_Fierens
work_keys_str_mv AT groszdiegofernando ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice
_version_ 1768544172477775872

Ejemplares similares