BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior

We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and st...

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Autores principales:	Saleh Medina, Leila Maria, Reinoso, María Elba, Negri, Ricardo Martin, Rubi, Diego
Publicado:	2017
Materias:	BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v628_n_p208_Roman http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00406090_v628_n_p208_Roman
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spelling	paper:paper_00406090_v628_n_p208_Roman2023-06-08T15:04:38Z BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior Saleh Medina, Leila Maria Reinoso, María Elba Negri, Ricardo Martin Rubi, Diego BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V. Fil:Saleh Medina, L.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Reinoso, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Negri, R.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2017 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v628_n_p208_Roman http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films
spellingShingle	BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films Saleh Medina, Leila Maria Reinoso, María Elba Negri, Ricardo Martin Rubi, Diego BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
topic_facet	BaTiO3 Memristive oxides Thin films on silicon Barium compounds Ferroelectric films Ferroelectricity Memristors Microstructure Pulsed laser deposition Pulsed lasers Silicon Stoichiometry Batio Fabrication and characterizations Ferroelectric order Laser-pulse energy Oxidation/reduction Platinized silicon Resistive switching Tetragonal distortion Thin films
description	We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V.
author	Saleh Medina, Leila Maria Reinoso, María Elba Negri, Ricardo Martin Rubi, Diego
author_facet	Saleh Medina, Leila Maria Reinoso, María Elba Negri, Ricardo Martin Rubi, Diego
author_sort	Saleh Medina, Leila Maria
title	BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_short	BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_full	BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_fullStr	BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_full_unstemmed	BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
title_sort	batio3 thin films on platinized silicon: growth, characterization and resistive memory behavior
publishDate	2017
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v628_n_p208_Roman http://hdl.handle.net/20.500.12110/paper_00406090_v628_n_p208_Roman
work_keys_str_mv	AT salehmedinaleilamaria batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior AT reinosomariaelba batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior AT negriricardomartin batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior AT rubidiego batio3thinfilmsonplatinizedsilicongrowthcharacterizationandresistivememorybehavior
_version_	1768545179136950272

BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior

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