Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a...

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Detalles Bibliográficos
Autores principales: Gilabert, Ulises Eduardo, Scarpettini, Alberto F., Trigubo, Alicia Beatriz
Publicado: 2010
Materias:
A1. Growth models
A3. Vapor phase epitaxy
B1. Cadmium compounds
B2. Semiconducting II-VI materials
CdTe
Composition profile
Crystalline orientations
Discrete mathematics
Epilayers grown
Experimental conditions
Finite rate
Growth models
Growth techniques
HgCdTe
Isothermal vapor phase epitaxy
Mixed controls
MOCVD
Non-linear
Nonlinear diffusion
Numerical values
Semiconducting II-VI materials
Bioactivity
Cadmium
Cadmium alloys
Cadmium compounds
Chemical vapor deposition
Crystal growth
Crystalline materials
Epilayers
Growth kinetics
Mathematical techniques
Mercury (metal)
Mercury compounds
Rate constants
Semiconductor growth
Substrates
Surface reactions
Vapor phase epitaxy
Vapors
Film growth
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220248_v312_n9_p1481_Gilabert
http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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