Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a...

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Autores principales:	Gilabert, Ulises Eduardo, Scarpettini, Alberto F., Trigubo, Alicia Beatriz
Publicado:	2010
Materias:	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220248_v312_n9_p1481_Gilabert http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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spelling	paper:paper_00220248_v312_n9_p1481_Gilabert2023-06-08T14:45:05Z Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations Gilabert, Ulises Eduardo Scarpettini, Alberto F. Trigubo, Alicia Beatriz A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion-convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD. © 2010 Elsevier B.V. All rights reserved. Fil:Gilabert, U. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Scarpettini, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Trigubó, A.B. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220248_v312_n9_p1481_Gilabert http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
spellingShingle	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth Gilabert, Ulises Eduardo Scarpettini, Alberto F. Trigubo, Alicia Beatriz Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
topic_facet	A1. Growth models A3. Vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting II-VI materials A1. Growth models A3. Vapor phase epitaxy CdTe Composition profile Crystalline orientations Discrete mathematics Epilayers grown Experimental conditions Finite rate Growth models Growth techniques HgCdTe Isothermal vapor phase epitaxy Mixed controls MOCVD Non-linear Nonlinear diffusion Numerical values Semiconducting II-VI materials Bioactivity Cadmium Cadmium alloys Cadmium compounds Chemical vapor deposition Crystal growth Crystalline materials Epilayers Growth kinetics Mathematical techniques Mercury (metal) Mercury compounds Rate constants Semiconductor growth Substrates Surface reactions Vapor phase epitaxy Vapors Film growth
description	Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion-convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD. © 2010 Elsevier B.V. All rights reserved.
author	Gilabert, Ulises Eduardo Scarpettini, Alberto F. Trigubo, Alicia Beatriz
author_facet	Gilabert, Ulises Eduardo Scarpettini, Alberto F. Trigubo, Alicia Beatriz
author_sort	Gilabert, Ulises Eduardo
title	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_short	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_fullStr	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full_unstemmed	Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_sort	growth kinetics of isovpe hgcdte epilayers obtained on alloyed cdte substrates with different crystalline orientations
publishDate	2010
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00220248_v312_n9_p1481_Gilabert http://hdl.handle.net/20.500.12110/paper_00220248_v312_n9_p1481_Gilabert
work_keys_str_mv	AT gilabertuliseseduardo growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations AT scarpettinialbertof growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations AT triguboaliciabeatriz growthkineticsofisovpehgcdteepilayersobtainedonalloyedcdtesubstrateswithdifferentcrystallineorientations
_version_	1768542491232960512

Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

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