Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repe...

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Autores principales:	Rozenberg, Marcelo Javier, Rubi, Diego, Levy, Pablo Eduardo
Publicado:	2012
Materias:	High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v111_n8_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00218979_v111_n8_p_Ghenzi
record_format	dspace
spelling	paper:paper_00218979_v111_n8_p_Ghenzi2023-06-08T14:42:49Z Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol Rozenberg, Marcelo Javier Rubi, Diego Levy, Pablo Eduardo High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2012 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v111_n8_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments
spellingShingle	High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments Rozenberg, Marcelo Javier Rubi, Diego Levy, Pablo Eduardo Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
topic_facet	High resistance High-resistance state Low-resistance state Model simulation Multipulses Nonvolatile memory devices Oxide interfaces Resistance state Resistance values Resistive switching Room temperature Time constants Computer simulation Interface states Manganese oxide Experiments
description	We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics.
author	Rozenberg, Marcelo Javier Rubi, Diego Levy, Pablo Eduardo
author_facet	Rozenberg, Marcelo Javier Rubi, Diego Levy, Pablo Eduardo
author_sort	Rozenberg, Marcelo Javier
title	Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_short	Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_full	Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_fullStr	Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_full_unstemmed	Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
title_sort	optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol
publishDate	2012
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v111_n8_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
work_keys_str_mv	AT rozenbergmarcelojavier optimizationofresistiveswitchingperformanceofmetalmanganiteoxideinterfacesbyamultipulseprotocol AT rubidiego optimizationofresistiveswitchingperformanceofmetalmanganiteoxideinterfacesbyamultipulseprotocol AT levypabloeduardo optimizationofresistiveswitchingperformanceofmetalmanganiteoxideinterfacesbyamultipulseprotocol
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Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

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