Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of...

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Detalles Bibliográficos
Autores principales:	Sánchez, María José, Rozenberg, Marcelo Javier, Levy, Pablo Eduardo
Publicado:	2011
Materias:	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v98_n12_p_GomezMarlasca http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v98_n12_p_GomezMarlasca
record_format	dspace
spelling	paper:paper_00036951_v98_n12_p_GomezMarlasca2023-06-08T14:24:44Z Asymmetric pulsing for reliable operation of titanium/manganite memristors Sánchez, María José Rozenberg, Marcelo Javier Levy, Pablo Eduardo Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles. © 2011 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2011 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v98_n12_p_GomezMarlasca http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
spellingShingle	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies Sánchez, María José Rozenberg, Marcelo Javier Levy, Pablo Eduardo Asymmetric pulsing for reliable operation of titanium/manganite memristors
topic_facet	Detrimental effects Drift-free Memory cell Numerical models Reliable operation RESET pulse Resistance values Switching cycles Manganese oxide Oxygen Titanium Oxygen vacancies
description	We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles. © 2011 American Institute of Physics.
author	Sánchez, María José Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_facet	Sánchez, María José Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_sort	Sánchez, María José
title	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_short	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_full	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_fullStr	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_full_unstemmed	Asymmetric pulsing for reliable operation of titanium/manganite memristors
title_sort	asymmetric pulsing for reliable operation of titanium/manganite memristors
publishDate	2011
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v98_n12_p_GomezMarlasca http://hdl.handle.net/20.500.12110/paper_00036951_v98_n12_p_GomezMarlasca
work_keys_str_mv	AT sanchezmariajose asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT rozenbergmarcelojavier asymmetricpulsingforreliableoperationoftitaniummanganitememristors AT levypabloeduardo asymmetricpulsingforreliableoperationoftitaniummanganitememristors
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Asymmetric pulsing for reliable operation of titanium/manganite memristors

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