HfO2 based memory devices with rectifying capabilities
Guardado en:
| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | Inglés |
| Publicado: |
American Institute of Physics
2014
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| Materias: | |
| Acceso en línea: | http://www-biblio.inti.gob.ar:80/gsdl/collect/inti/index/assoc/HASH01b2/9c9f79a6.dir/doc.pdf |
| Aporte de: |
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dspace |
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INTI |
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I-60 |
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R-166 |
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Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI) |
| language |
Inglés |
| orig_language_str_mv |
eng |
| topic |
Dispositivos electrónicos Capacitores Electrodos Aislación Metales Oxidos Resistencia eléctrica Voltaje Mediciones eléctricas |
| spellingShingle |
Dispositivos electrónicos Capacitores Electrodos Aislación Metales Oxidos Resistencia eléctrica Voltaje Mediciones eléctricas Quinteros, C. Zazpe, R. Marlasca, F.G. Golmar, F. Casanova, F. Stoliar, P. Hueso, L. Levy, P. GIA, GAIANN, CAC-CNEA. San Martín, Bs. As, AR CIC nanoGUNE. Donostia-San Sebastián, ES INTI-Electrónica e Informática. Buenos Aires, AR IKERBASQUE, Basque Foundation for Science. Bilbao, ES Université de Nantes. IMN, CNRS. Nantes, FR ECyT, UNSAM. San Martín, Bs. As., AR HfO2 based memory devices with rectifying capabilities |
| format |
article |
| author |
Quinteros, C. Zazpe, R. Marlasca, F.G. Golmar, F. Casanova, F. Stoliar, P. Hueso, L. Levy, P. GIA, GAIANN, CAC-CNEA. San Martín, Bs. As, AR CIC nanoGUNE. Donostia-San Sebastián, ES INTI-Electrónica e Informática. Buenos Aires, AR IKERBASQUE, Basque Foundation for Science. Bilbao, ES Université de Nantes. IMN, CNRS. Nantes, FR ECyT, UNSAM. San Martín, Bs. As., AR |
| author_facet |
Quinteros, C. Zazpe, R. Marlasca, F.G. Golmar, F. Casanova, F. Stoliar, P. Hueso, L. Levy, P. GIA, GAIANN, CAC-CNEA. San Martín, Bs. As, AR CIC nanoGUNE. Donostia-San Sebastián, ES INTI-Electrónica e Informática. Buenos Aires, AR IKERBASQUE, Basque Foundation for Science. Bilbao, ES Université de Nantes. IMN, CNRS. Nantes, FR ECyT, UNSAM. San Martín, Bs. As., AR |
| author_sort |
Quinteros, C. |
| title |
HfO2 based memory devices with rectifying capabilities |
| title_short |
HfO2 based memory devices with rectifying capabilities |
| title_full |
HfO2 based memory devices with rectifying capabilities |
| title_fullStr |
HfO2 based memory devices with rectifying capabilities |
| title_full_unstemmed |
HfO2 based memory devices with rectifying capabilities |
| title_sort |
hfo2 based memory devices with rectifying capabilities |
| publisher |
American Institute of Physics |
| publishDate |
2014 |
| url |
http://www-biblio.inti.gob.ar:80/gsdl/collect/inti/index/assoc/HASH01b2/9c9f79a6.dir/doc.pdf |
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AT quinterosc hfo2basedmemorydeviceswithrectifyingcapabilities AT zazper hfo2basedmemorydeviceswithrectifyingcapabilities AT marlascafg hfo2basedmemorydeviceswithrectifyingcapabilities AT golmarf hfo2basedmemorydeviceswithrectifyingcapabilities AT casanovaf hfo2basedmemorydeviceswithrectifyingcapabilities AT stoliarp hfo2basedmemorydeviceswithrectifyingcapabilities AT huesol hfo2basedmemorydeviceswithrectifyingcapabilities AT levyp hfo2basedmemorydeviceswithrectifyingcapabilities AT giagaianncaccneasanmartinbsasar hfo2basedmemorydeviceswithrectifyingcapabilities AT cicnanogunedonostiasansebastianes hfo2basedmemorydeviceswithrectifyingcapabilities AT intielectronicaeinformaticabuenosairesar hfo2basedmemorydeviceswithrectifyingcapabilities AT ikerbasquebasquefoundationforsciencebilbaoes hfo2basedmemorydeviceswithrectifyingcapabilities AT universitedenantesimncnrsnantesfr hfo2basedmemorydeviceswithrectifyingcapabilities AT ecytunsamsanmartinbsasar hfo2basedmemorydeviceswithrectifyingcapabilities |
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