On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

"We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Fur...

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Detalles Bibliográficos
Autores principales:	Fierens, Pablo Ignacio, Patterson, Germán, Bellomo, Guido, Grosz, Diego
Formato:	Ponencias en Congresos acceptedVersion
Lenguaje:	Inglés
Publicado:	2017
Materias:	RESONANCIA ESTOCASTICA DISPOSITIVOS DE MEMORIA RUIDO
Acceso en línea:	http://ri.itba.edu.ar/handle/123456789/499
Aporte de:	Repositorio Institucional Instituto Tecnológico de Buenos Aires (ITBA) de Instituto Tecnológico de Buenos Aires (ITBA)

id	I32-R138-123456789-499
record_format	dspace
spelling	I32-R138-123456789-4992022-12-07T14:13:56Z On the effect of noise and electronics bandwidth on a stochastic-resonance memory device Fierens, Pablo Ignacio Patterson, Germán Bellomo, Guido Grosz, Diego RESONANCIA ESTOCASTICA DISPOSITIVOS DE MEMORIA RUIDO "We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the inﬂuence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise." 2017-04-19T14:11:49Z 2017-04-19T14:11:49Z 2011 Ponencias en Congresos info:eu-repo/semantics/acceptedVersion 0094-243X http://ri.itba.edu.ar/handle/123456789/499 en info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3574866 info:eu-repo/grantAgreement/ANPCYT/PICTO/31176/AR. Ciudad Autónoma de Buenos Aires application/pdf
institution	Instituto Tecnológico de Buenos Aires (ITBA)
institution_str	I-32
repository_str	R-138
collection	Repositorio Institucional Instituto Tecnológico de Buenos Aires (ITBA)
language	Inglés
topic	RESONANCIA ESTOCASTICA DISPOSITIVOS DE MEMORIA RUIDO
spellingShingle	RESONANCIA ESTOCASTICA DISPOSITIVOS DE MEMORIA RUIDO Fierens, Pablo Ignacio Patterson, Germán Bellomo, Guido Grosz, Diego On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
topic_facet	RESONANCIA ESTOCASTICA DISPOSITIVOS DE MEMORIA RUIDO
description	"We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the inﬂuence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise."
format	Ponencias en Congresos acceptedVersion
author	Fierens, Pablo Ignacio Patterson, Germán Bellomo, Guido Grosz, Diego
author_facet	Fierens, Pablo Ignacio Patterson, Germán Bellomo, Guido Grosz, Diego
author_sort	Fierens, Pablo Ignacio
title	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_short	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_fullStr	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_full_unstemmed	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device
title_sort	on the effect of noise and electronics bandwidth on a stochastic-resonance memory device
publishDate	2017
url	http://ri.itba.edu.ar/handle/123456789/499
work_keys_str_mv	AT fierenspabloignacio ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT pattersongerman ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT bellomoguido ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice AT groszdiego ontheeffectofnoiseandelectronicsbandwidthonastochasticresonancememorydevice
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On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

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