Hysteresis switching loops in Ag-manganite memristive interfaces
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops...
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I28-R145-paper_00218979_v107_n9_p_Ghenzi_oai2020-10-19 Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. 2010 Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. application/pdf http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar J Appl Phys 2010;107(9) Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching Hysteresis switching loops in Ag-manganite memristive interfaces info:eu-repo/semantics/article info:ar-repo/semantics/artículo info:eu-repo/semantics/publishedVersion http://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=artiaex&d=paper_00218979_v107_n9_p_Ghenzi_oai |
institution |
Universidad de Buenos Aires |
institution_str |
I-28 |
repository_str |
R-145 |
collection |
Repositorio Digital de la Universidad de Buenos Aires (UBA) |
topic |
Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching |
spellingShingle |
Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. Hysteresis switching loops in Ag-manganite memristive interfaces |
topic_facet |
Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching |
description |
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics. |
format |
Artículo Artículo publishedVersion |
author |
Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. |
author_facet |
Ghenzi, N. Sánchez, M.J. Gomez-Marlasca, F. Levy, P. Rozenberg, M.J. |
author_sort |
Ghenzi, N. |
title |
Hysteresis switching loops in Ag-manganite memristive interfaces |
title_short |
Hysteresis switching loops in Ag-manganite memristive interfaces |
title_full |
Hysteresis switching loops in Ag-manganite memristive interfaces |
title_fullStr |
Hysteresis switching loops in Ag-manganite memristive interfaces |
title_full_unstemmed |
Hysteresis switching loops in Ag-manganite memristive interfaces |
title_sort |
hysteresis switching loops in ag-manganite memristive interfaces |
publishDate |
2010 |
url |
http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi http://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=artiaex&d=paper_00218979_v107_n9_p_Ghenzi_oai |
work_keys_str_mv |
AT ghenzin hysteresisswitchingloopsinagmanganitememristiveinterfaces AT sanchezmj hysteresisswitchingloopsinagmanganitememristiveinterfaces AT gomezmarlascaf hysteresisswitchingloopsinagmanganitememristiveinterfaces AT levyp hysteresisswitchingloopsinagmanganitememristiveinterfaces AT rozenbergmj hysteresisswitchingloopsinagmanganitememristiveinterfaces |
_version_ |
1766026547930595328 |