Atomic surrounding of Co implanted in AlN at high energy

AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EX...

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Detalles Bibliográficos
Autores principales: Traverse, Agnès, Delobbe, Anne, Zanghi, Didier, Rentería, Mario, Gailhanou, Marc
Formato: Articulo
Lenguaje:Inglés
Publicado: 2001
Materias:
Ciencias Exactas
Física
AlN
cobalt
ion implantation
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/104783
http://hdl.handle.net/11336/98129
http://scripts.iucr.org/cgi-bin/paper?S0909049500012632
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
Descripción
Sumario:AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.

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