Irradiated graphene as a tunable Floquet topological insulator

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In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasienergy band structure and becomes a Floquet insulator. Here, we analyze how topologically protected edge states arise inside these gaps in the presence of an edge. Our results show that...

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Autores principales: Usaj, Gonzalo, Pérez Piskunow, Pablo Matías, Foa Torres, Luis Eduardo Francisco, Balseiro, Carlos A.
Formato: article
Lenguaje:Inglés
Publicado: 2021
Materias:
Graphene
Topological insulators
Chern numbers
Floquet
Acceso en línea:http://hdl.handle.net/11086/20395
https://doi.org/10.1103/PhysRevB.90.115423
Aporte de:
Repositorio Digital Universitario (UNC) de Universidad Nacional de Córdoba
id I10-R141-11086-20395
record_format dspace
institution Universidad Nacional de Córdoba
institution_str I-10
repository_str R-141
collection Repositorio Digital Universitario (UNC)
language Inglés
topic Graphene
Topological insulators
Chern numbers
Floquet
spellingShingle Graphene
Topological insulators
Chern numbers
Floquet
Usaj, Gonzalo
Pérez Piskunow, Pablo Matías
Foa Torres, Luis Eduardo Francisco
Balseiro, Carlos A.
Irradiated graphene as a tunable Floquet topological insulator
topic_facet Graphene
Topological insulators
Chern numbers
Floquet
description In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasienergy band structure and becomes a Floquet insulator. Here, we analyze how topologically protected edge states arise inside these gaps in the presence of an edge. Our results show that the gap appearing at hΩ/2, where hΩ is the photon energy, is bridged by two chiral edge states whose propagation direction is set by the direction of the polarization of the radiation field. Therefore, both the propagation direction and the energy window where the states appear can be controlled externally. We present both analytical and numerical calculations that fully characterize these states. This is complemented by simple topological arguments that account for them and by numerical calculations for the case of the semi-infinite sample, thereby eliminating finite-size effects.
format article
author Usaj, Gonzalo
Pérez Piskunow, Pablo Matías
Foa Torres, Luis Eduardo Francisco
Balseiro, Carlos A.
author_facet Usaj, Gonzalo
Pérez Piskunow, Pablo Matías
Foa Torres, Luis Eduardo Francisco
Balseiro, Carlos A.
author_sort Usaj, Gonzalo
title Irradiated graphene as a tunable Floquet topological insulator
title_short Irradiated graphene as a tunable Floquet topological insulator
title_full Irradiated graphene as a tunable Floquet topological insulator
title_fullStr Irradiated graphene as a tunable Floquet topological insulator
title_full_unstemmed Irradiated graphene as a tunable Floquet topological insulator
title_sort irradiated graphene as a tunable floquet topological insulator
publishDate 2021
url http://hdl.handle.net/11086/20395
https://doi.org/10.1103/PhysRevB.90.115423
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AT perezpiskunowpablomatias irradiatedgrapheneasatunablefloquettopologicalinsulator
AT foatorresluiseduardofrancisco irradiatedgrapheneasatunablefloquettopologicalinsulator
AT balseirocarlosa irradiatedgrapheneasatunablefloquettopologicalinsulator
bdutipo_str Repositorios
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