Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

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We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, wit...

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Autor principal: Sordi, G.
Otros Autores: Amaricci, A., Rozenberg, M.J
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2009
Acceso en línea:Registro en Scopus
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100 1 |a Sordi, G. 
245 1 0 |a Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model 
260 |c 2009 
270 1 0 |m Sordi, G.; Laboratoire de Physique des Solides, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France 
506 |2 openaire  |e Política editorial 
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520 3 |a We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets. © 2009 The American Physical Society.  |l eng 
593 |a Laboratoire de Physique des Solides, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France 
593 |a Departamento de Física, FCEN, Ciudad Universitaria Pab. i, Buenos Aires 1428, Argentina 
700 1 |a Amaricci, A. 
700 1 |a Rozenberg, M.J. 
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