Nonequilibrium electronic transport in a one-dimensional Mott insulator

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We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads....

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Detalles Bibliográficos
Autor principal: Heidrich-Meisner, F.
Otros Autores: González, I., Al-Hassanieh, K.A, Feiguin, Adrián Esteban, Rozenberg, M.J, Dagotto, E.
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2010
Acceso en línea:Registro en Scopus
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Biblioteca Central Dr. Luis F. Leloir (FCEN) de Universidad de Buenos Aires
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100 1 |a Heidrich-Meisner, F. 
245 1 0 |a Nonequilibrium electronic transport in a one-dimensional Mott insulator 
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270 1 0 |m Heidrich-Meisner, F.; Physics Department, Arnold Sommerfeld Center for Theoretical Physics, Ludwig-Maximilians-Universität München, D-80333 München, Germany; email: heidrich-meisner@lmu.de 
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506 |2 openaire  |e Política editorial 
520 3 |a We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. © 2010 The American Physical Society.  |l eng 
593 |a Physics Department, Arnold Sommerfeld Center for Theoretical Physics, Ludwig-Maximilians-Universität München, D-80333 München, Germany 
593 |a Centro de Supercomputación de Galicia, Avenida de Vigo s/n, E-15705 Santiago de Compostela, Spain 
593 |a Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United States 
593 |a Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071, United States 
593 |a Laboratoire de Physique des Solides, CNRS-UMR 8502, Universite de Paris-Sud, Orsay 91405, France 
593 |a Departamento de Física, FCEN, Ciudad Universitaria Pabellón i, Buenos Aires 1428, Argentina 
593 |a Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States 
593 |a Department of Physics, University of Tennessee, Knoxville, TN 37996, United States 
700 1 |a González, I. 
700 1 |a Al-Hassanieh, K.A. 
700 1 |a Feiguin, Adrián Esteban 
700 1 |a Rozenberg, M.J. 
700 1 |a Dagotto, E. 
773 0 |d 2010  |g v. 82  |k n. 20  |p Phys. Rev. B Condens. Matter Mater. Phys.  |x 10980121  |t Physical Review B - Condensed Matter and Materials Physics 
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963 |a VARI 

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