Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...

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Detalles Bibliográficos
Autor principal: Karmakar, Supriya
Formato: Libro electrónico
Lenguaje:Inglés
Publicado: New Delhi : Springer India : Imprint: Springer, 2014.
Materias:
Electronic circuits.
Nanotechnology.
Engineering.
Microengineering.
Circuits and Systems.
Electronic Circuits and Devices.
Acceso en línea:http://dx.doi.org/10.1007/978-81-322-1635-3
Aporte de:Registro referencial: Solicitar el recurso aquí
Bibliotecas (ING-UNLP) de Universidad Nacional de La Plata

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